SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

In a method of manufacturing a semiconductor device, a first layer containing a Si1-xGex layer doped with phosphorous is formed over an n-type semiconductor layer, a metal layer containing a metal material is formed over the first layer, and a thermal process is performed to form an alloy layer incl...

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Hauptverfasser: KUO Chih-Wei, CHAO Yuan-Shun
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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CHAO Yuan-Shun
description In a method of manufacturing a semiconductor device, a first layer containing a Si1-xGex layer doped with phosphorous is formed over an n-type semiconductor layer, a metal layer containing a metal material is formed over the first layer, and a thermal process is performed to form an alloy layer including Si, Ge and the metal material.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2017243760A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2017243760A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2017243760A13</originalsourceid><addsrcrecordid>eNrjZDANdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8HX0C3VzdA4JDfL0c1fwdQ3x8HdRCPFwDXL1d-NhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGhuZGJsbmZgaOhsbEqQIAnFYotA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF</title><source>esp@cenet</source><creator>KUO Chih-Wei ; CHAO Yuan-Shun</creator><creatorcontrib>KUO Chih-Wei ; CHAO Yuan-Shun</creatorcontrib><description>In a method of manufacturing a semiconductor device, a first layer containing a Si1-xGex layer doped with phosphorous is formed over an n-type semiconductor layer, a metal layer containing a metal material is formed over the first layer, and a thermal process is performed to form an alloy layer including Si, Ge and the metal material.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20170824&amp;DB=EPODOC&amp;CC=US&amp;NR=2017243760A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20170824&amp;DB=EPODOC&amp;CC=US&amp;NR=2017243760A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KUO Chih-Wei</creatorcontrib><creatorcontrib>CHAO Yuan-Shun</creatorcontrib><title>SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF</title><description>In a method of manufacturing a semiconductor device, a first layer containing a Si1-xGex layer doped with phosphorous is formed over an n-type semiconductor layer, a metal layer containing a metal material is formed over the first layer, and a thermal process is performed to form an alloy layer including Si, Ge and the metal material.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDANdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8HX0C3VzdA4JDfL0c1fwdQ3x8HdRCPFwDXL1d-NhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGhuZGJsbmZgaOhsbEqQIAnFYotA</recordid><startdate>20170824</startdate><enddate>20170824</enddate><creator>KUO Chih-Wei</creator><creator>CHAO Yuan-Shun</creator><scope>EVB</scope></search><sort><creationdate>20170824</creationdate><title>SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF</title><author>KUO Chih-Wei ; CHAO Yuan-Shun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2017243760A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2017</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KUO Chih-Wei</creatorcontrib><creatorcontrib>CHAO Yuan-Shun</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KUO Chih-Wei</au><au>CHAO Yuan-Shun</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF</title><date>2017-08-24</date><risdate>2017</risdate><abstract>In a method of manufacturing a semiconductor device, a first layer containing a Si1-xGex layer doped with phosphorous is formed over an n-type semiconductor layer, a metal layer containing a metal material is formed over the first layer, and a thermal process is performed to form an alloy layer including Si, Ge and the metal material.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-09T20%3A29%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KUO%20Chih-Wei&rft.date=2017-08-24&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2017243760A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true