MULTI-GATE TUNNEL FIELD-EFFECT TRANSISTOR (TFET)
A Tunnel Field-Effect Transistor (TFET) is provided comprising a source-channel-drain structure of a semiconducting material. The source-channel-drain structure comprises a source region being n-type or p-type doped, a drain region oppositely doped than the source region and an intrinsic or lowly do...
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| creator | Pourghaderi Mohammad Ali Alian AliReza |
| description | A Tunnel Field-Effect Transistor (TFET) is provided comprising a source-channel-drain structure of a semiconducting material. The source-channel-drain structure comprises a source region being n-type or p-type doped, a drain region oppositely doped than the source region and an intrinsic or lowly doped channel region situated between the source region and the drain region. The TFET further comprises a reference gate structure covering the channel region and a source-side gate structure aside of the reference gate structure wherein the work function and/or electrostatic potential of the source-side gate structure and the reference work function and/or electrostatic potential of the reference gate structure are selected for allowing the tunneling mechanism of the TFET device in operation to occur at the interface or interface region between the source-side gate structure and the reference gate structure in the channel region. |
| format | Patent |
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The source-channel-drain structure comprises a source region being n-type or p-type doped, a drain region oppositely doped than the source region and an intrinsic or lowly doped channel region situated between the source region and the drain region. The TFET further comprises a reference gate structure covering the channel region and a source-side gate structure aside of the reference gate structure wherein the work function and/or electrostatic potential of the source-side gate structure and the reference work function and/or electrostatic potential of the reference gate structure are selected for allowing the tunneling mechanism of the TFET device in operation to occur at the interface or interface region between the source-side gate structure and the reference gate structure in the channel region.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170622&DB=EPODOC&CC=US&NR=2017179283A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170622&DB=EPODOC&CC=US&NR=2017179283A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Pourghaderi Mohammad Ali</creatorcontrib><creatorcontrib>Alian AliReza</creatorcontrib><title>MULTI-GATE TUNNEL FIELD-EFFECT TRANSISTOR (TFET)</title><description>A Tunnel Field-Effect Transistor (TFET) is provided comprising a source-channel-drain structure of a semiconducting material. The source-channel-drain structure comprises a source region being n-type or p-type doped, a drain region oppositely doped than the source region and an intrinsic or lowly doped channel region situated between the source region and the drain region. The TFET further comprises a reference gate structure covering the channel region and a source-side gate structure aside of the reference gate structure wherein the work function and/or electrostatic potential of the source-side gate structure and the reference work function and/or electrostatic potential of the reference gate structure are selected for allowing the tunneling mechanism of the TFET device in operation to occur at the interface or interface region between the source-side gate structure and the reference gate structure in the channel region.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDDwDfUJ8dR1dwxxVQgJ9fNz9VFw83T1cdF1dXNzdQ5RCAly9Av2DA7xD1LQCHFzDdHkYWBNS8wpTuWF0twMykBhZw_d1IL8-NTigsTk1LzUkvjQYCMDQ3NDc0sjC2NHQ2PiVAEAvDQnJQ</recordid><startdate>20170622</startdate><enddate>20170622</enddate><creator>Pourghaderi Mohammad Ali</creator><creator>Alian AliReza</creator><scope>EVB</scope></search><sort><creationdate>20170622</creationdate><title>MULTI-GATE TUNNEL FIELD-EFFECT TRANSISTOR (TFET)</title><author>Pourghaderi Mohammad Ali ; Alian AliReza</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2017179283A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2017</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Pourghaderi Mohammad Ali</creatorcontrib><creatorcontrib>Alian AliReza</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Pourghaderi Mohammad Ali</au><au>Alian AliReza</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MULTI-GATE TUNNEL FIELD-EFFECT TRANSISTOR (TFET)</title><date>2017-06-22</date><risdate>2017</risdate><abstract>A Tunnel Field-Effect Transistor (TFET) is provided comprising a source-channel-drain structure of a semiconducting material. The source-channel-drain structure comprises a source region being n-type or p-type doped, a drain region oppositely doped than the source region and an intrinsic or lowly doped channel region situated between the source region and the drain region. The TFET further comprises a reference gate structure covering the channel region and a source-side gate structure aside of the reference gate structure wherein the work function and/or electrostatic potential of the source-side gate structure and the reference work function and/or electrostatic potential of the reference gate structure are selected for allowing the tunneling mechanism of the TFET device in operation to occur at the interface or interface region between the source-side gate structure and the reference gate structure in the channel region.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | MULTI-GATE TUNNEL FIELD-EFFECT TRANSISTOR (TFET) |
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