Power FET With Integrated Sensors And Method Of Manufacturing

A semiconductor device and a method of making are disclosed. The device includes a substrate, a power field effect transistor (FET), and integrated sensors including a current sensor, a high current fault sensor, and a temperature sensor. The structure of the power FET includes a drain contact regio...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Daum Gary Eugene, Molloy Simon John, Baldwin David J, Rahman Abidur
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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