HIGH VOLTAGE TOLERANT WORD-LINE DRIVER

Described is a word-line driver which is operable to switch a voltage level of a word-line to one of: first power supply, second power supply, or third power supply wherein the voltage level of the second power supply is higher than the voltage level of the first power supply, and wherein transistor...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: WEI Liqiong, DRAY Cyrille
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator WEI Liqiong
DRAY Cyrille
description Described is a word-line driver which is operable to switch a voltage level of a word-line to one of: first power supply, second power supply, or third power supply wherein the voltage level of the second power supply is higher than the voltage level of the first power supply, and wherein transistors of the word-line driver have same gate oxide thicknesses.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2017169874A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2017169874A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2017169874A13</originalsourceid><addsrcrecordid>eNrjZFDz8HT3UAjz9wlxdHdVCPH3cQ1y9AtRCPcPctH18fRzVXAJ8gxzDeJhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGhuaGZpYW5iaOhsbEqQIAUcMkkw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>HIGH VOLTAGE TOLERANT WORD-LINE DRIVER</title><source>esp@cenet</source><creator>WEI Liqiong ; DRAY Cyrille</creator><creatorcontrib>WEI Liqiong ; DRAY Cyrille</creatorcontrib><description>Described is a word-line driver which is operable to switch a voltage level of a word-line to one of: first power supply, second power supply, or third power supply wherein the voltage level of the second power supply is higher than the voltage level of the first power supply, and wherein transistors of the word-line driver have same gate oxide thicknesses.</description><language>eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20170615&amp;DB=EPODOC&amp;CC=US&amp;NR=2017169874A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20170615&amp;DB=EPODOC&amp;CC=US&amp;NR=2017169874A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WEI Liqiong</creatorcontrib><creatorcontrib>DRAY Cyrille</creatorcontrib><title>HIGH VOLTAGE TOLERANT WORD-LINE DRIVER</title><description>Described is a word-line driver which is operable to switch a voltage level of a word-line to one of: first power supply, second power supply, or third power supply wherein the voltage level of the second power supply is higher than the voltage level of the first power supply, and wherein transistors of the word-line driver have same gate oxide thicknesses.</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFDz8HT3UAjz9wlxdHdVCPH3cQ1y9AtRCPcPctH18fRzVXAJ8gxzDeJhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGhuaGZpYW5iaOhsbEqQIAUcMkkw</recordid><startdate>20170615</startdate><enddate>20170615</enddate><creator>WEI Liqiong</creator><creator>DRAY Cyrille</creator><scope>EVB</scope></search><sort><creationdate>20170615</creationdate><title>HIGH VOLTAGE TOLERANT WORD-LINE DRIVER</title><author>WEI Liqiong ; DRAY Cyrille</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2017169874A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2017</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>WEI Liqiong</creatorcontrib><creatorcontrib>DRAY Cyrille</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WEI Liqiong</au><au>DRAY Cyrille</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>HIGH VOLTAGE TOLERANT WORD-LINE DRIVER</title><date>2017-06-15</date><risdate>2017</risdate><abstract>Described is a word-line driver which is operable to switch a voltage level of a word-line to one of: first power supply, second power supply, or third power supply wherein the voltage level of the second power supply is higher than the voltage level of the first power supply, and wherein transistors of the word-line driver have same gate oxide thicknesses.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2017169874A1
source esp@cenet
subjects INFORMATION STORAGE
PHYSICS
STATIC STORES
title HIGH VOLTAGE TOLERANT WORD-LINE DRIVER
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T17%3A11%3A42IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=WEI%20Liqiong&rft.date=2017-06-15&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2017169874A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true