HIGH VOLTAGE TOLERANT WORD-LINE DRIVER
Described is a word-line driver which is operable to switch a voltage level of a word-line to one of: first power supply, second power supply, or third power supply wherein the voltage level of the second power supply is higher than the voltage level of the first power supply, and wherein transistor...
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creator | WEI Liqiong DRAY Cyrille |
description | Described is a word-line driver which is operable to switch a voltage level of a word-line to one of: first power supply, second power supply, or third power supply wherein the voltage level of the second power supply is higher than the voltage level of the first power supply, and wherein transistors of the word-line driver have same gate oxide thicknesses. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2017169874A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2017169874A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2017169874A13</originalsourceid><addsrcrecordid>eNrjZFDz8HT3UAjz9wlxdHdVCPH3cQ1y9AtRCPcPctH18fRzVXAJ8gxzDeJhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGhuaGZpYW5iaOhsbEqQIAUcMkkw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>HIGH VOLTAGE TOLERANT WORD-LINE DRIVER</title><source>esp@cenet</source><creator>WEI Liqiong ; DRAY Cyrille</creator><creatorcontrib>WEI Liqiong ; DRAY Cyrille</creatorcontrib><description>Described is a word-line driver which is operable to switch a voltage level of a word-line to one of: first power supply, second power supply, or third power supply wherein the voltage level of the second power supply is higher than the voltage level of the first power supply, and wherein transistors of the word-line driver have same gate oxide thicknesses.</description><language>eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170615&DB=EPODOC&CC=US&NR=2017169874A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170615&DB=EPODOC&CC=US&NR=2017169874A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WEI Liqiong</creatorcontrib><creatorcontrib>DRAY Cyrille</creatorcontrib><title>HIGH VOLTAGE TOLERANT WORD-LINE DRIVER</title><description>Described is a word-line driver which is operable to switch a voltage level of a word-line to one of: first power supply, second power supply, or third power supply wherein the voltage level of the second power supply is higher than the voltage level of the first power supply, and wherein transistors of the word-line driver have same gate oxide thicknesses.</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFDz8HT3UAjz9wlxdHdVCPH3cQ1y9AtRCPcPctH18fRzVXAJ8gxzDeJhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGhuaGZpYW5iaOhsbEqQIAUcMkkw</recordid><startdate>20170615</startdate><enddate>20170615</enddate><creator>WEI Liqiong</creator><creator>DRAY Cyrille</creator><scope>EVB</scope></search><sort><creationdate>20170615</creationdate><title>HIGH VOLTAGE TOLERANT WORD-LINE DRIVER</title><author>WEI Liqiong ; DRAY Cyrille</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2017169874A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2017</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>WEI Liqiong</creatorcontrib><creatorcontrib>DRAY Cyrille</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WEI Liqiong</au><au>DRAY Cyrille</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>HIGH VOLTAGE TOLERANT WORD-LINE DRIVER</title><date>2017-06-15</date><risdate>2017</risdate><abstract>Described is a word-line driver which is operable to switch a voltage level of a word-line to one of: first power supply, second power supply, or third power supply wherein the voltage level of the second power supply is higher than the voltage level of the first power supply, and wherein transistors of the word-line driver have same gate oxide thicknesses.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | INFORMATION STORAGE PHYSICS STATIC STORES |
title | HIGH VOLTAGE TOLERANT WORD-LINE DRIVER |
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