SEMICONDUCTOR MIXED GATE STRUCTURE

A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises a substrate, a fin structure, a metal gate and a first polysilicon strip. The fin structure is on the substrate. The metal gate is over the fin structure and is substantially perpendicular...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HUNG SHENG CHIANG, LU TSUNG, CHANG CHIH-FU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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