SEMICONDUCTOR MIXED GATE STRUCTURE

SEMICONDUCTOR MIXED GATE STRUCTURE

A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises a substrate, a fin structure, a metal gate and a first polysilicon strip. The fin structure is on the substrate. The metal gate is over the fin structure and is substantially perpendicular...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: HUNG SHENG CHIANG, LU TSUNG, CHANG CHIH-FU
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises a substrate, a fin structure, a metal gate and a first polysilicon strip. The fin structure is on the substrate. The metal gate is over the fin structure and is substantially perpendicular to the fin structure. The first polysilicon strip is at a first edge of the fin structure and is substantially parallel to the metal gate.