SPIN CHUCK WITH GAS LEAKAGE PREVENTION
An apparatus for processing wafer-shaped articles, comprises a process chamber, and a spin chuck positioned inside the process chamber. The spin chuck is configured to hold a wafer-shaped article at a predetermined process position. A plate covers the spin chuck and is affixed to or formed integrall...
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| creator | GLEISSNER Andreas LOIDL Bernhard BANDARAPU Bhaskar JUNK Markus |
| description | An apparatus for processing wafer-shaped articles, comprises a process chamber, and a spin chuck positioned inside the process chamber. The spin chuck is configured to hold a wafer-shaped article at a predetermined process position. A plate covers the spin chuck and is affixed to or formed integrally with the spin chuck for rotation therewith, the plate having a central opening. A nozzle assembly extends into the process chamber such that a discharge end of the nozzle assembly passes through the central opening of the plate to define a gap between the plate and the nozzle assembly, the gap extending from an upper inlet end to a lower outlet end. The nozzle assembly comprises at least one side nozzle positioned to direct a gas flow adjacent to the gap and upstream of the lower outlet end, and configured to generate a reduced pressure at a position upstream of the lower outlet end of the gap, thereby to control gas flow through the gap from the upper inlet end toward the lower outlet end. |
| format | Patent |
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The spin chuck is configured to hold a wafer-shaped article at a predetermined process position. A plate covers the spin chuck and is affixed to or formed integrally with the spin chuck for rotation therewith, the plate having a central opening. A nozzle assembly extends into the process chamber such that a discharge end of the nozzle assembly passes through the central opening of the plate to define a gap between the plate and the nozzle assembly, the gap extending from an upper inlet end to a lower outlet end. The nozzle assembly comprises at least one side nozzle positioned to direct a gas flow adjacent to the gap and upstream of the lower outlet end, and configured to generate a reduced pressure at a position upstream of the lower outlet end of the gap, thereby to control gas flow through the gap from the upper inlet end toward the lower outlet end.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170608&DB=EPODOC&CC=US&NR=2017162426A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170608&DB=EPODOC&CC=US&NR=2017162426A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GLEISSNER Andreas</creatorcontrib><creatorcontrib>LOIDL Bernhard</creatorcontrib><creatorcontrib>BANDARAPU Bhaskar</creatorcontrib><creatorcontrib>JUNK Markus</creatorcontrib><title>SPIN CHUCK WITH GAS LEAKAGE PREVENTION</title><description>An apparatus for processing wafer-shaped articles, comprises a process chamber, and a spin chuck positioned inside the process chamber. The spin chuck is configured to hold a wafer-shaped article at a predetermined process position. A plate covers the spin chuck and is affixed to or formed integrally with the spin chuck for rotation therewith, the plate having a central opening. A nozzle assembly extends into the process chamber such that a discharge end of the nozzle assembly passes through the central opening of the plate to define a gap between the plate and the nozzle assembly, the gap extending from an upper inlet end to a lower outlet end. The nozzle assembly comprises at least one side nozzle positioned to direct a gas flow adjacent to the gap and upstream of the lower outlet end, and configured to generate a reduced pressure at a position upstream of the lower outlet end of the gap, thereby to control gas flow through the gap from the upper inlet end toward the lower outlet end.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFALDvD0U3D2CHX2Vgj3DPFQcHcMVvBxdfR2dHdVCAhyDXP1C_H09-NhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGhuaGZkYmRmaOhsbEqQIAPPQkUg</recordid><startdate>20170608</startdate><enddate>20170608</enddate><creator>GLEISSNER Andreas</creator><creator>LOIDL Bernhard</creator><creator>BANDARAPU Bhaskar</creator><creator>JUNK Markus</creator><scope>EVB</scope></search><sort><creationdate>20170608</creationdate><title>SPIN CHUCK WITH GAS LEAKAGE PREVENTION</title><author>GLEISSNER Andreas ; LOIDL Bernhard ; BANDARAPU Bhaskar ; JUNK Markus</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2017162426A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2017</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>GLEISSNER Andreas</creatorcontrib><creatorcontrib>LOIDL Bernhard</creatorcontrib><creatorcontrib>BANDARAPU Bhaskar</creatorcontrib><creatorcontrib>JUNK Markus</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GLEISSNER Andreas</au><au>LOIDL Bernhard</au><au>BANDARAPU Bhaskar</au><au>JUNK Markus</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SPIN CHUCK WITH GAS LEAKAGE PREVENTION</title><date>2017-06-08</date><risdate>2017</risdate><abstract>An apparatus for processing wafer-shaped articles, comprises a process chamber, and a spin chuck positioned inside the process chamber. The spin chuck is configured to hold a wafer-shaped article at a predetermined process position. A plate covers the spin chuck and is affixed to or formed integrally with the spin chuck for rotation therewith, the plate having a central opening. A nozzle assembly extends into the process chamber such that a discharge end of the nozzle assembly passes through the central opening of the plate to define a gap between the plate and the nozzle assembly, the gap extending from an upper inlet end to a lower outlet end. The nozzle assembly comprises at least one side nozzle positioned to direct a gas flow adjacent to the gap and upstream of the lower outlet end, and configured to generate a reduced pressure at a position upstream of the lower outlet end of the gap, thereby to control gas flow through the gap from the upper inlet end toward the lower outlet end.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | SPIN CHUCK WITH GAS LEAKAGE PREVENTION |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T07%3A24%3A31IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=GLEISSNER%20Andreas&rft.date=2017-06-08&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2017162426A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |