METHOD FOR EVALUATING DEFECT REGION OF SEMICONDUCTOR SUBSTRATE
A method evaluates a defect region of a semiconductor substrate based on C-V characteristics of a MOS structure formed on the semiconductor substrate, including determining a relationship between defect region and flat band voltage or fixed charge density by using a semiconductor substrate having a...
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| creator | ARATANI Takashi |
| description | A method evaluates a defect region of a semiconductor substrate based on C-V characteristics of a MOS structure formed on the semiconductor substrate, including determining a relationship between defect region and flat band voltage or fixed charge density by using a semiconductor substrate having a known defect region, under a heat treatment condition and a C-V characteristic evaluating condition identical to conditions for evaluating a defect region of a semiconductor substrate to be evaluated, determining a flat band voltage or a fixed charge density of the semiconductor substrate to be evaluated from C-V characteristics of a MOS structure formed on the semiconductor substrate to be evaluated, and identifying the defect region of the semiconductor substrate to be evaluated based on the relationship between defect region and flat band voltage or fixed charge density previously determined, whereby the defect region of the semiconductor substrate is evaluated. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2017160335A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2017160335A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2017160335A13</originalsourceid><addsrcrecordid>eNrjZLDzdQ3x8HdRcPMPUnANc_QJdQzx9HNXcHF1c3UOUQhydff091Pwd1MIdvX1dPb3cwl1DgGqDA51Cg4Jcgxx5WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgaG5oZmBsbGpo6GxsSpAgAKrCsp</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD FOR EVALUATING DEFECT REGION OF SEMICONDUCTOR SUBSTRATE</title><source>esp@cenet</source><creator>ARATANI Takashi</creator><creatorcontrib>ARATANI Takashi</creatorcontrib><description>A method evaluates a defect region of a semiconductor substrate based on C-V characteristics of a MOS structure formed on the semiconductor substrate, including determining a relationship between defect region and flat band voltage or fixed charge density by using a semiconductor substrate having a known defect region, under a heat treatment condition and a C-V characteristic evaluating condition identical to conditions for evaluating a defect region of a semiconductor substrate to be evaluated, determining a flat band voltage or a fixed charge density of the semiconductor substrate to be evaluated from C-V characteristics of a MOS structure formed on the semiconductor substrate to be evaluated, and identifying the defect region of the semiconductor substrate to be evaluated based on the relationship between defect region and flat band voltage or fixed charge density previously determined, whereby the defect region of the semiconductor substrate is evaluated.</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; MEASURING ; MEASURING ELECTRIC VARIABLES ; MEASURING MAGNETIC VARIABLES ; METALLURGY ; PHYSICS ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; TESTING ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170608&DB=EPODOC&CC=US&NR=2017160335A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170608&DB=EPODOC&CC=US&NR=2017160335A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ARATANI Takashi</creatorcontrib><title>METHOD FOR EVALUATING DEFECT REGION OF SEMICONDUCTOR SUBSTRATE</title><description>A method evaluates a defect region of a semiconductor substrate based on C-V characteristics of a MOS structure formed on the semiconductor substrate, including determining a relationship between defect region and flat band voltage or fixed charge density by using a semiconductor substrate having a known defect region, under a heat treatment condition and a C-V characteristic evaluating condition identical to conditions for evaluating a defect region of a semiconductor substrate to be evaluated, determining a flat band voltage or a fixed charge density of the semiconductor substrate to be evaluated from C-V characteristics of a MOS structure formed on the semiconductor substrate to be evaluated, and identifying the defect region of the semiconductor substrate to be evaluated based on the relationship between defect region and flat band voltage or fixed charge density previously determined, whereby the defect region of the semiconductor substrate is evaluated.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>MEASURING</subject><subject>MEASURING ELECTRIC VARIABLES</subject><subject>MEASURING MAGNETIC VARIABLES</subject><subject>METALLURGY</subject><subject>PHYSICS</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>TESTING</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLDzdQ3x8HdRcPMPUnANc_QJdQzx9HNXcHF1c3UOUQhydff091Pwd1MIdvX1dPb3cwl1DgGqDA51Cg4Jcgxx5WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgaG5oZmBsbGpo6GxsSpAgAKrCsp</recordid><startdate>20170608</startdate><enddate>20170608</enddate><creator>ARATANI Takashi</creator><scope>EVB</scope></search><sort><creationdate>20170608</creationdate><title>METHOD FOR EVALUATING DEFECT REGION OF SEMICONDUCTOR SUBSTRATE</title><author>ARATANI Takashi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2017160335A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2017</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>MEASURING</topic><topic>MEASURING ELECTRIC VARIABLES</topic><topic>MEASURING MAGNETIC VARIABLES</topic><topic>METALLURGY</topic><topic>PHYSICS</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>TESTING</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>ARATANI Takashi</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ARATANI Takashi</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR EVALUATING DEFECT REGION OF SEMICONDUCTOR SUBSTRATE</title><date>2017-06-08</date><risdate>2017</risdate><abstract>A method evaluates a defect region of a semiconductor substrate based on C-V characteristics of a MOS structure formed on the semiconductor substrate, including determining a relationship between defect region and flat band voltage or fixed charge density by using a semiconductor substrate having a known defect region, under a heat treatment condition and a C-V characteristic evaluating condition identical to conditions for evaluating a defect region of a semiconductor substrate to be evaluated, determining a flat band voltage or a fixed charge density of the semiconductor substrate to be evaluated from C-V characteristics of a MOS structure formed on the semiconductor substrate to be evaluated, and identifying the defect region of the semiconductor substrate to be evaluated based on the relationship between defect region and flat band voltage or fixed charge density previously determined, whereby the defect region of the semiconductor substrate is evaluated.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES METALLURGY PHYSICS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TESTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | METHOD FOR EVALUATING DEFECT REGION OF SEMICONDUCTOR SUBSTRATE |
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