EPITAXIAL LIFT-OFF PROCESS WITH GUIDED ETCHING

A method for performing epitaxial lift-off allowing reuse of a III-V substrate to grow III-V devices is presented. A sample is received comprising a growth substrate with a top surface, a sacrificial layer on the top surface, and a device layer on the sacrificial layer. This substrate is supported i...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Sadana Devendra K, Shi Leathen, Shiu Kuen-Ting, Cheng Cheng-Wei, Li Ning
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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