COMBO AMORPHOUS AND LTPS TRANSISTORS

COMBO AMORPHOUS AND LTPS TRANSISTORS

The present disclosure generally relates to an improved large area substrate thin film transistor device, and method of fabrication thereof. More specifically, amorphous and LTPS transistors are formed by first forming an amorphous silicon layer, annealing the amorphous silicon layer to form polycry...

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Hauptverfasser: NUNAN Peter, ZHANG Xuena
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator NUNAN Peter
ZHANG Xuena
description The present disclosure generally relates to an improved large area substrate thin film transistor device, and method of fabrication thereof. More specifically, amorphous and LTPS transistors are formed by first forming an amorphous silicon layer, annealing the amorphous silicon layer to form polycrystalline silicon, depositing a masking layer over a first portion of the polycrystalline silicon layer, implanting a second portion of the polycrystalline silicon layer with an amorphizing species, and removing the masking layer.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title COMBO AMORPHOUS AND LTPS TRANSISTORS
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