Trench IGBT with Tub-Shaped Floating P-Well and Hole Drains to P-Body Regions

Trench IGBT with Tub-Shaped Floating P-Well and Hole Drains to P-Body Regions

A trench IGBT has a gate electrode disposed in a trench. A tub-shaped floating P-well is disposed on one side of the trench. The tub-shaped floating P-well has a central shallower portion and a peripheral deeper portion. An inner sidewall of the trench is semiconductor material of the peripheral dee...

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1. Verfasser: Tsukanov Vladimir
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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description A trench IGBT has a gate electrode disposed in a trench. A tub-shaped floating P-well is disposed on one side of the trench. The tub-shaped floating P-well has a central shallower portion and a peripheral deeper portion. An inner sidewall of the trench is semiconductor material of the peripheral deeper portion of the floating P-well. On the other side of the trench is a P type body region involving a plurality of deeper portions and a plurality of shallower portions. Each deeper portion extends to the trench such that some parts of the outer sidewall of the trench are semiconductor material of these deeper P-body portions. Other parts of the outer sidewall of the trench are semiconductor material of the shallower P-body portions. A shallow N+ emitter region is disposed at the top of the outer sidewall. The IGBT has fast turn off and enhanced on state conductivity modulation.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Trench IGBT with Tub-Shaped Floating P-Well and Hole Drains to P-Body Regions
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