SUBSTRATE HAVING TWO SEMICONDUCTOR MATERIALS ON INSULATOR

SUBSTRATE HAVING TWO SEMICONDUCTOR MATERIALS ON INSULATOR

A method for forming a semiconductor device includes forming a first insulator layer on a first substrate of a first semiconductor material, implanting hydrogen ions into the first substrate to form a hydrogen-implanted layer, forming a recessed region in the first substrate, forming a second semico...

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Hauptverfasser: ZHU Ji Guang, LI Hai Ting
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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LI Hai Ting
description A method for forming a semiconductor device includes forming a first insulator layer on a first substrate of a first semiconductor material, implanting hydrogen ions into the first substrate to form a hydrogen-implanted layer, forming a recessed region in the first substrate, forming a second semiconductor material in the recessed region, and forming a second insulator layer over the second semiconductor material and the first substrate. The method also includes providing a second substrate with a third insulator layer disposed thereon, bonding the first substrate with the second substrate, and removing a lower portion of the first substrate at the hydrogen-implanted layer. A portion of the first substrate is removed to expose a surface of the second semiconductor material in the recessed region, thereby providing a layer of the first semiconductor material adjacent to a layer of the second semiconductor material on the second insulator layer.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SUBSTRATE HAVING TWO SEMICONDUCTOR MATERIALS ON INSULATOR
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