METHOD OF MANUFACTURING A DEVICE WITH MOS TRANSISTORS

A device includes both low-voltage (LV) and high-voltage (HV) metal oxide semiconductor (MOS) transistors of opposite types. Gate stacks for the transistors are formed over a semiconductor layer. First spacers made of a first insulator are provided on the gate stacks of the LV and HV MOS transistors...

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Hauptverfasser: Josse Emmanuel, Chhun Sonarith, Bidal Gregory, Golanski Dominique, Weber Olivier, Andrieu Francois, Mazurier Jerome
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creator Josse Emmanuel
Chhun Sonarith
Bidal Gregory
Golanski Dominique
Weber Olivier
Andrieu Francois
Mazurier Jerome
description A device includes both low-voltage (LV) and high-voltage (HV) metal oxide semiconductor (MOS) transistors of opposite types. Gate stacks for the transistors are formed over a semiconductor layer. First spacers made of a first insulator are provided on the gate stacks of the LV and HV MOS transistors. Second spacers made of a second insulator are provided on the gate stacks of the HV MOS transistors only. The insulators are selectively removed to expose the semiconductor layer. Epitaxial growth of semiconductor material is made from the exposed semiconductor layer to form raised source-drain structures that are separated from the gate stacks by the first spacers for the LV MOS transistors and the second spacers for the HV MOS transistors.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHOD OF MANUFACTURING A DEVICE WITH MOS TRANSISTORS
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