SEMICONDUCTOR DEVICE WITH IMPURITY-DOPED REGION AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE WITH IMPURITY-DOPED REGION AND METHOD OF FABRICATING THE SAME

A semiconductor device includes an interlayer insulating film formed on a substrate, a plurality of contacts formed in the interlayer insulating film, and an impurity-doped region formed around the contacts in the interlayer insulating film and along a lengthwise direction of the contacts.

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Bibliographische Detailangaben
1. Verfasser: Fukutome Hidenobu
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Beschreibung
Zusammenfassung:A semiconductor device includes an interlayer insulating film formed on a substrate, a plurality of contacts formed in the interlayer insulating film, and an impurity-doped region formed around the contacts in the interlayer insulating film and along a lengthwise direction of the contacts.