TRENCH MOSFET WITH SELF-ALIGNED BODY CONTACT WITH SPACER

Trench MOSFET with self-aligned body contact with spacer. In accordance with an embodiment of the present invention, a semiconductor device includes a semiconductor substrate, and at least two gate trenches formed in the semiconductor substrate. Each of the trenches comprises a gate electrode. The s...

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Bibliographische Detailangaben

Hauptverfasser:	GUAN Lingpeng, TERRILL Kyle, JO Seokjin
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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