PZT THIN FILM LAMINATE AND MANUFACTURING METHOD THEREOF
The present invention provides a technology for preventing the generation of a pyrochlore phase, which is an impurity phase, in forming a PZT thin film by sputtering, without using a conventional seed layer. The present invention provides a PZT thin film laminate including: a Si substrate 10; a TiOx...
Gespeichert in:
| Hauptverfasser: | , , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | HENMI Mitsunori KOBAYASHI Hiroki KIMURA Isamu HIROSE Mitsutaka TSUYUKI Tatsuro TSUKAGOSHI Kazuya SUU Koukou |
| description | The present invention provides a technology for preventing the generation of a pyrochlore phase, which is an impurity phase, in forming a PZT thin film by sputtering, without using a conventional seed layer. The present invention provides a PZT thin film laminate including: a Si substrate 10; a TiOx layer 4 serving as a platinum-adhesion layer on the Si substrate 10; a Pt electrode layer 5 on the TiOx layer 4; a Ti thin film layer 6 on the Pt electrode layer 5; and a PZT thin film layer 7 on the Ti thin film layer 6. The Ti thin film layer 6 can have a thickness of 1 nm or more and 10 nm or less. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2017104147A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2017104147A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2017104147A13</originalsourceid><addsrcrecordid>eNrjZDAPiApRCPHw9FNw8_TxVfBx9PX0cwxxVXD0c1HwdfQLdXN0DgkN8vRzV_B1DfHwdwGqdQ1y9XfjYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBobmhgYmhibmjobGxKkCAM8TKQE</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PZT THIN FILM LAMINATE AND MANUFACTURING METHOD THEREOF</title><source>esp@cenet</source><creator>HENMI Mitsunori ; KOBAYASHI Hiroki ; KIMURA Isamu ; HIROSE Mitsutaka ; TSUYUKI Tatsuro ; TSUKAGOSHI Kazuya ; SUU Koukou</creator><creatorcontrib>HENMI Mitsunori ; KOBAYASHI Hiroki ; KIMURA Isamu ; HIROSE Mitsutaka ; TSUYUKI Tatsuro ; TSUKAGOSHI Kazuya ; SUU Koukou</creatorcontrib><description>The present invention provides a technology for preventing the generation of a pyrochlore phase, which is an impurity phase, in forming a PZT thin film by sputtering, without using a conventional seed layer. The present invention provides a PZT thin film laminate including: a Si substrate 10; a TiOx layer 4 serving as a platinum-adhesion layer on the Si substrate 10; a Pt electrode layer 5 on the TiOx layer 4; a Ti thin film layer 6 on the Pt electrode layer 5; and a PZT thin film layer 7 on the Ti thin film layer 6. The Ti thin film layer 6 can have a thickness of 1 nm or more and 10 nm or less.</description><language>eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170413&DB=EPODOC&CC=US&NR=2017104147A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170413&DB=EPODOC&CC=US&NR=2017104147A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HENMI Mitsunori</creatorcontrib><creatorcontrib>KOBAYASHI Hiroki</creatorcontrib><creatorcontrib>KIMURA Isamu</creatorcontrib><creatorcontrib>HIROSE Mitsutaka</creatorcontrib><creatorcontrib>TSUYUKI Tatsuro</creatorcontrib><creatorcontrib>TSUKAGOSHI Kazuya</creatorcontrib><creatorcontrib>SUU Koukou</creatorcontrib><title>PZT THIN FILM LAMINATE AND MANUFACTURING METHOD THEREOF</title><description>The present invention provides a technology for preventing the generation of a pyrochlore phase, which is an impurity phase, in forming a PZT thin film by sputtering, without using a conventional seed layer. The present invention provides a PZT thin film laminate including: a Si substrate 10; a TiOx layer 4 serving as a platinum-adhesion layer on the Si substrate 10; a Pt electrode layer 5 on the TiOx layer 4; a Ti thin film layer 6 on the Pt electrode layer 5; and a PZT thin film layer 7 on the Ti thin film layer 6. The Ti thin film layer 6 can have a thickness of 1 nm or more and 10 nm or less.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAPiApRCPHw9FNw8_TxVfBx9PX0cwxxVXD0c1HwdfQLdXN0DgkN8vRzV_B1DfHwdwGqdQ1y9XfjYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBobmhgYmhibmjobGxKkCAM8TKQE</recordid><startdate>20170413</startdate><enddate>20170413</enddate><creator>HENMI Mitsunori</creator><creator>KOBAYASHI Hiroki</creator><creator>KIMURA Isamu</creator><creator>HIROSE Mitsutaka</creator><creator>TSUYUKI Tatsuro</creator><creator>TSUKAGOSHI Kazuya</creator><creator>SUU Koukou</creator><scope>EVB</scope></search><sort><creationdate>20170413</creationdate><title>PZT THIN FILM LAMINATE AND MANUFACTURING METHOD THEREOF</title><author>HENMI Mitsunori ; KOBAYASHI Hiroki ; KIMURA Isamu ; HIROSE Mitsutaka ; TSUYUKI Tatsuro ; TSUKAGOSHI Kazuya ; SUU Koukou</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2017104147A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2017</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>HENMI Mitsunori</creatorcontrib><creatorcontrib>KOBAYASHI Hiroki</creatorcontrib><creatorcontrib>KIMURA Isamu</creatorcontrib><creatorcontrib>HIROSE Mitsutaka</creatorcontrib><creatorcontrib>TSUYUKI Tatsuro</creatorcontrib><creatorcontrib>TSUKAGOSHI Kazuya</creatorcontrib><creatorcontrib>SUU Koukou</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HENMI Mitsunori</au><au>KOBAYASHI Hiroki</au><au>KIMURA Isamu</au><au>HIROSE Mitsutaka</au><au>TSUYUKI Tatsuro</au><au>TSUKAGOSHI Kazuya</au><au>SUU Koukou</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PZT THIN FILM LAMINATE AND MANUFACTURING METHOD THEREOF</title><date>2017-04-13</date><risdate>2017</risdate><abstract>The present invention provides a technology for preventing the generation of a pyrochlore phase, which is an impurity phase, in forming a PZT thin film by sputtering, without using a conventional seed layer. The present invention provides a PZT thin film laminate including: a Si substrate 10; a TiOx layer 4 serving as a platinum-adhesion layer on the Si substrate 10; a Pt electrode layer 5 on the TiOx layer 4; a Ti thin film layer 6 on the Pt electrode layer 5; and a PZT thin film layer 7 on the Ti thin film layer 6. The Ti thin film layer 6 can have a thickness of 1 nm or more and 10 nm or less.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US2017104147A1 |
| source | esp@cenet |
| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | PZT THIN FILM LAMINATE AND MANUFACTURING METHOD THEREOF |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-24T19%3A47%3A50IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HENMI%20Mitsunori&rft.date=2017-04-13&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2017104147A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |