SELECTIVE SILICON DIOXIDE DEPOSITION USING PHOSPHONIC ACID SELF ASSEMBLED MONOLAYERS AS NUCLEATION INHIBITOR

Methods of selectively depositing a patterned layer on exposed dielectric material but not on exposed metal surfaces are described. A self-assembled monolayer (SAM) is deposited using phosphonic acids. Molecules of the self-assembled monolayer include a head moiety and a tail moiety, the head moiety...

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Bibliographische Detailangaben

Hauptverfasser:	Jan Visser Robert, Saly Mark, Howlader Rana, Goradia Prerna Sonthalia, Chakraborty Tapash, Venkatasubramanian Eswaranand, Thompson David
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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