Verify Operations Using Different Sense Node Voltages In A Memory Device

Sense circuits in a memory device can be pre-charged to different levels in a sensing process to reduce the amount of time used for sensing. For example, in a program operation, a memory cell is in a fast programming mode until its threshold voltage exceeds an offset verify voltage (VO) of a data st...

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Bibliographische Detailangaben

Hauptverfasser:	Moogat Farookh, Kim Kwang-Ho, Chu Alexander, Yuh Jong Hak, Li Yenlung
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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