Amplifier
The present invention is directed to a radiation-hardened by design quad amplifier in a commercial 0.25 μm CMOS process; a 500 had total ionization dose (TID) (which degrades parts over time), and single event latchup immunity (SEL) which is greater than the linear energy transfer (LET) 120 MeV-sq....
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| Hauptverfasser: | , |
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The present invention is directed to a radiation-hardened by design quad amplifier in a commercial 0.25 μm CMOS process; a 500 had total ionization dose (TID) (which degrades parts over time), and single event latchup immunity (SEL) which is greater than the linear energy transfer (LET) 120 MeV-sq. cm/mg; a single 3.3 V (range 3.0-3.6 V) power supply Vdd or dual power supply +/−1.65 V; four (4) channels of analog inputs; enhanced low-dose rate sensitivity (ELDRS) immunity; output rail-to-rail input/output (I/O) OPAMP which can drive resistive loads down to 1 kOhm; an active high enable pin en; a bias pin that can be used to adjust the OPAMP quiescent current; and a compact hermetic 16-lead ceramic small outline integrated circuit (SOIC) package. |
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