SPIN TORQUE MRAM FABRICATION USING NEGATIVE TONE LITHOGRAPHY AND ION BEAM ETCHING

A method for forming a memory device includes masking a photoresist material using a reticle and a developer having a polarity opposite that of the photoresist to provide an island of photoresist material. A planarizing layer is etched to establish a pillar of planarizing material defined by the isl...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Joseph Eric A, Lin Qinghuang, Annunziata Anthony J, Marchack Nathan P, Galan Armand A, Lauer Gen P, Holmes Steve
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
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