Method for Protecting a Surface of a Substrate and Semiconductor Device

Method for Protecting a Surface of a Substrate and Semiconductor Device

A Method for protecting a surface of a substrate includes processing the substrate, forming a pyrolytic carbon layer on at least one surface of the substrate, and subjecting the substrate to thermal treatment, specifically above a temperature of about 1300° C., typically above about 1400° C.

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Hauptverfasser: Kueck Daniel, Denifl Guenter, Eigler Werner, Moennich Roland
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Kueck Daniel
Denifl Guenter
Eigler Werner
Moennich Roland
description A Method for protecting a surface of a substrate includes processing the substrate, forming a pyrolytic carbon layer on at least one surface of the substrate, and subjecting the substrate to thermal treatment, specifically above a temperature of about 1300° C., typically above about 1400° C.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method for Protecting a Surface of a Substrate and Semiconductor Device
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