METHOD AND APPARATUS FOR DRY GAS PHASE CHEMICALLY ETCHING A STRUCTURE

According to the invention there is provided a method of dry gas phase chemically etching a structure comprising the steps of: positioning the structure in an etch chamber, the structure comprising a first material and a second material, wherein the first material is selected from silicon, molybdenu...

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Bibliographische Detailangaben

Hauptverfasser:	NEUMANN, JR. John Joseph, LEBOUITZ Kyle Stanton
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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