TWO-PART PROGRAMMING METHODS

A first memory cell is programmed to a first level using a first set of program pulses within a first programming voltage range. A second memory cell to be programmed to a second level less than the first level is inhibited while programing the first memory cell to the first level. After programing...

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Bibliographische Detailangaben

Hauptverfasser:	Sarin Vishal, Vahidimowlavi Allahyar
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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