TWO-PART PROGRAMMING METHODS

TWO-PART PROGRAMMING METHODS

A first memory cell is programmed to a first level using a first set of program pulses within a first programming voltage range. A second memory cell to be programmed to a second level less than the first level is inhibited while programing the first memory cell to the first level. After programing...

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Hauptverfasser: Sarin Vishal, Vahidimowlavi Allahyar
Format: Patent
Sprache:eng
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
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creator Sarin Vishal
Vahidimowlavi Allahyar
description A first memory cell is programmed to a first level using a first set of program pulses within a first programming voltage range. A second memory cell to be programmed to a second level less than the first level is inhibited while programing the first memory cell to the first level. After programing the first memory cell to the first level, the second memory cell is programmed to the second level using a second set of program pulses within a second programming voltage range, where the first programming voltage range overlaps the second programming voltage range. The first memory cell that is programmed to the first level is inhibited while programing the second memory cell to the second level.
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subjects INFORMATION STORAGE
PHYSICS
STATIC STORES
title TWO-PART PROGRAMMING METHODS
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