THIN FILM TRANSISTOR, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR
A thin film transistor includes semiconductor layer, source electrode, and drain electrode. The semiconductor layer includes first to fifth regions. The third region is provided between the first and second regions. The first region is disposed between the fourth and third regions. The second region...
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| creator | NAKANO Shintaro MAEDA Yuya MOROOKA Tetsu MOMOSE Hisayo KANREI Nobuki OHGURO Tatsuya FUKASE Kazuya |
| description | A thin film transistor includes semiconductor layer, source electrode, and drain electrode. The semiconductor layer includes first to fifth regions. The third region is provided between the first and second regions. The first region is disposed between the fourth and third regions. The second region is disposed between the fifth and third regions. The semiconductor layer includes an oxide. The source electrode is connected to the first region. The drain electrode is connected to the second region. First thickness of the first region along a second direction is thinner than third thickness along the second direction of each of the third to fifth regions. The second direction crosses a first direction and connects the first region and the source electrode. The first direction connects the first and second regions. Second thickness of the second region along the second direction is thinner than the third thickness. |
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The semiconductor layer includes first to fifth regions. The third region is provided between the first and second regions. The first region is disposed between the fourth and third regions. The second region is disposed between the fifth and third regions. The semiconductor layer includes an oxide. The source electrode is connected to the first region. The drain electrode is connected to the second region. First thickness of the first region along a second direction is thinner than third thickness along the second direction of each of the third to fifth regions. The second direction crosses a first direction and connects the first region and the source electrode. The first direction connects the first and second regions. 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The semiconductor layer includes first to fifth regions. The third region is provided between the first and second regions. The first region is disposed between the fourth and third regions. The second region is disposed between the fifth and third regions. The semiconductor layer includes an oxide. The source electrode is connected to the first region. The drain electrode is connected to the second region. First thickness of the first region along a second direction is thinner than third thickness along the second direction of each of the third to fifth regions. The second direction crosses a first direction and connects the first region and the source electrode. The first direction connects the first and second regions. Second thickness of the second region along the second direction is thinner than the third thickness.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZIgN8fD0U3Dz9PFVCAly9Av2DA7xD9JRCHb19XT293MJdQZyFVxcwzydXXUUHP1cFHxdQzz8XRTcgMK-jn6hbo7OIaFBnn7uCtgM4mFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgaGZsYWBoaGpo6GxsSpAgDDvDOs</recordid><startdate>20161229</startdate><enddate>20161229</enddate><creator>NAKANO Shintaro</creator><creator>MAEDA Yuya</creator><creator>MOROOKA Tetsu</creator><creator>MOMOSE Hisayo</creator><creator>KANREI Nobuki</creator><creator>OHGURO Tatsuya</creator><creator>FUKASE Kazuya</creator><scope>EVB</scope></search><sort><creationdate>20161229</creationdate><title>THIN FILM TRANSISTOR, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR</title><author>NAKANO Shintaro ; MAEDA Yuya ; MOROOKA Tetsu ; MOMOSE Hisayo ; KANREI Nobuki ; OHGURO Tatsuya ; FUKASE Kazuya</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2016380115A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2016</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>NAKANO Shintaro</creatorcontrib><creatorcontrib>MAEDA Yuya</creatorcontrib><creatorcontrib>MOROOKA Tetsu</creatorcontrib><creatorcontrib>MOMOSE Hisayo</creatorcontrib><creatorcontrib>KANREI Nobuki</creatorcontrib><creatorcontrib>OHGURO Tatsuya</creatorcontrib><creatorcontrib>FUKASE Kazuya</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NAKANO Shintaro</au><au>MAEDA Yuya</au><au>MOROOKA Tetsu</au><au>MOMOSE Hisayo</au><au>KANREI Nobuki</au><au>OHGURO Tatsuya</au><au>FUKASE Kazuya</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>THIN FILM TRANSISTOR, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR</title><date>2016-12-29</date><risdate>2016</risdate><abstract>A thin film transistor includes semiconductor layer, source electrode, and drain electrode. The semiconductor layer includes first to fifth regions. The third region is provided between the first and second regions. The first region is disposed between the fourth and third regions. The second region is disposed between the fifth and third regions. The semiconductor layer includes an oxide. The source electrode is connected to the first region. The drain electrode is connected to the second region. First thickness of the first region along a second direction is thinner than third thickness along the second direction of each of the third to fifth regions. The second direction crosses a first direction and connects the first region and the source electrode. The first direction connects the first and second regions. Second thickness of the second region along the second direction is thinner than the third thickness.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | THIN FILM TRANSISTOR, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR |
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