DEVICE STRUCTURES FOR A SILICON-ON-INSULATOR SUBSTRATE WITH A HIGH-RESISTANCE HANDLE WAFER

Methods for forming a device structure and device structures using a silicon-on-insulator substrate that includes a high-resistance handle wafer. A doped region is formed in the high-resistance handle wafer. A first trench is formed that extends through a device layer and a buried insulator layer of...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Stamper Anthony K, Ding Hanyi, Feilchenfeld Natalie B, Camillo-Castillo Renata, Jain Vibhor
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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