Measuring semiconductor doping using constant surface potential corona charging
An example method of characterizing a semiconductor sample includes measuring an initial value, Vin, of a surface potential at a region of a surface of the semiconductor sample, biasing the semiconductor sample to have a target surface potential value (V0) of 2V or less, and depositing a monitored a...
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| creator | Almeida Carlos Buday Csaba Wilson Marshall Lagowski Jacek Savtchouk Alexandre |
| description | An example method of characterizing a semiconductor sample includes measuring an initial value, Vin, of a surface potential at a region of a surface of the semiconductor sample, biasing the semiconductor sample to have a target surface potential value (V0) of 2V or less, and depositing a monitored amount of corona charge (ΔQ1) on the region of the surface after adjusting the surface potential to the target value. The method also includes measuring a first value, V1, of the surface potential at the region after depositing the corona charge, determining the first change of surface potential (ΔV1=V1−V0), and determining the first capacitance value C1=ΔQ1/ΔV1, and characterizing the semiconductor sample based on V0, V1, ΔV1, ΔQ1 and C1. |
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| subjects | INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS TESTING |
| title | Measuring semiconductor doping using constant surface potential corona charging |
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