FILM FOR SEMICONDUCTOR BACK SURFACE AND ITS USE

FILM FOR SEMICONDUCTOR BACK SURFACE AND ITS USE

It is an object of the present invention to provide a film for semiconductor back surface having reworkability, and an application of the film. A film for semiconductor back surface has: an adhering strength at 70° C. of 7 N/10 mm or less to a wafer before the film is thermally cured; and a rupture...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: TAKAMOTO Naohide, KIMURA Ryuichi
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator TAKAMOTO Naohide
KIMURA Ryuichi
description It is an object of the present invention to provide a film for semiconductor back surface having reworkability, and an application of the film. A film for semiconductor back surface has: an adhering strength at 70° C. of 7 N/10 mm or less to a wafer before the film is thermally cured; and a rupture elongation at 25° C. of 700% or less. The film for semiconductor back surface preferably has a degree of swelling due to ethanol of 1% by weight or more. The film for semiconductor back surface preferably contains an acrylic resin.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2016351432A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2016351432A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2016351432A13</originalsourceid><addsrcrecordid>eNrjZNB38_TxVXDzD1IIdvX1dPb3cwl1DgHynBydvRWCQ4PcHJ1dFRz9XBQ8Q4IVQoNdeRhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJfGiwkYGhmbGpoYmxkaOhMXGqAH3KJpg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>FILM FOR SEMICONDUCTOR BACK SURFACE AND ITS USE</title><source>esp@cenet</source><creator>TAKAMOTO Naohide ; KIMURA Ryuichi</creator><creatorcontrib>TAKAMOTO Naohide ; KIMURA Ryuichi</creatorcontrib><description>It is an object of the present invention to provide a film for semiconductor back surface having reworkability, and an application of the film. A film for semiconductor back surface has: an adhering strength at 70° C. of 7 N/10 mm or less to a wafer before the film is thermally cured; and a rupture elongation at 25° C. of 700% or less. The film for semiconductor back surface preferably has a degree of swelling due to ethanol of 1% by weight or more. The film for semiconductor back surface preferably contains an acrylic resin.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20161201&amp;DB=EPODOC&amp;CC=US&amp;NR=2016351432A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20161201&amp;DB=EPODOC&amp;CC=US&amp;NR=2016351432A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TAKAMOTO Naohide</creatorcontrib><creatorcontrib>KIMURA Ryuichi</creatorcontrib><title>FILM FOR SEMICONDUCTOR BACK SURFACE AND ITS USE</title><description>It is an object of the present invention to provide a film for semiconductor back surface having reworkability, and an application of the film. A film for semiconductor back surface has: an adhering strength at 70° C. of 7 N/10 mm or less to a wafer before the film is thermally cured; and a rupture elongation at 25° C. of 700% or less. The film for semiconductor back surface preferably has a degree of swelling due to ethanol of 1% by weight or more. The film for semiconductor back surface preferably contains an acrylic resin.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNB38_TxVXDzD1IIdvX1dPb3cwl1DgHynBydvRWCQ4PcHJ1dFRz9XBQ8Q4IVQoNdeRhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJfGiwkYGhmbGpoYmxkaOhMXGqAH3KJpg</recordid><startdate>20161201</startdate><enddate>20161201</enddate><creator>TAKAMOTO Naohide</creator><creator>KIMURA Ryuichi</creator><scope>EVB</scope></search><sort><creationdate>20161201</creationdate><title>FILM FOR SEMICONDUCTOR BACK SURFACE AND ITS USE</title><author>TAKAMOTO Naohide ; KIMURA Ryuichi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2016351432A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2016</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>TAKAMOTO Naohide</creatorcontrib><creatorcontrib>KIMURA Ryuichi</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TAKAMOTO Naohide</au><au>KIMURA Ryuichi</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>FILM FOR SEMICONDUCTOR BACK SURFACE AND ITS USE</title><date>2016-12-01</date><risdate>2016</risdate><abstract>It is an object of the present invention to provide a film for semiconductor back surface having reworkability, and an application of the film. A film for semiconductor back surface has: an adhering strength at 70° C. of 7 N/10 mm or less to a wafer before the film is thermally cured; and a rupture elongation at 25° C. of 700% or less. The film for semiconductor back surface preferably has a degree of swelling due to ethanol of 1% by weight or more. The film for semiconductor back surface preferably contains an acrylic resin.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2016351432A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title FILM FOR SEMICONDUCTOR BACK SURFACE AND ITS USE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T20%3A28%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=TAKAMOTO%20Naohide&rft.date=2016-12-01&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2016351432A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true