LOW VOLUME SHOWERHEAD WITH FACEPLATE HOLES FOR IMPROVED FLOW UNIFORMITY
A showerhead in a semiconductor processing apparatus can include faceplate through-holes configured to improve the flow uniformity during atomic layer deposition. The showerhead can include a faceplate having a plurality of through-holes for distributing gas onto a substrate, where the faceplate inc...
Gespeichert in:
Hauptverfasser: | , , , , , , , , , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | Chandrasekharan Ramesh LaVoie Adrien Varadarajan Seshasayee Petraglia Jennifer L Baldasseroni Chloe Sajjad Basha Kang Hu Pasquale Frank Sakiyama Yukinori Sangplung Saangrut Swaminathan Shankar Augustyniak Edward |
description | A showerhead in a semiconductor processing apparatus can include faceplate through-holes configured to improve the flow uniformity during atomic layer deposition. The showerhead can include a faceplate having a plurality of through-holes for distributing gas onto a substrate, where the faceplate includes small diameter through-holes. For example, the diameter of each of the through-holes can be less than about 0.04 inches. In addition or in the alternative, the showerhead can include edge through-holes positioned circumferentially along a ring having a diameter greater than a diameter of the substrate being processed. The showerhead can be a low volume showerhead and can include a baffle proximate one or more gas inlets in communication with a plenum volume of the showerhead. The faceplate with small diameter through-holes and/or edge through-holes can improve overall film non-uniformity, improve azimuthal film non-uniformity at the edge of the substrate, and enable operation at higher RF powers. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2016340782A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2016340782A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2016340782A13</originalsourceid><addsrcrecordid>eNrjZHD38Q9XCPP3CfV1VQj28A93DfJwdXRRCPcM8VBwc3R2DfBxDHFV8PD3cQ1WcPMPUvD0DQjyD3N1UXADaQz18wQK-nqGRPIwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUkvjQYCMDQzNjEwNzCyNHQ2PiVAEArWYtzw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>LOW VOLUME SHOWERHEAD WITH FACEPLATE HOLES FOR IMPROVED FLOW UNIFORMITY</title><source>esp@cenet</source><creator>Chandrasekharan Ramesh ; LaVoie Adrien ; Varadarajan Seshasayee ; Petraglia Jennifer L ; Baldasseroni Chloe ; Sajjad Basha ; Kang Hu ; Pasquale Frank ; Sakiyama Yukinori ; Sangplung Saangrut ; Swaminathan Shankar ; Augustyniak Edward</creator><creatorcontrib>Chandrasekharan Ramesh ; LaVoie Adrien ; Varadarajan Seshasayee ; Petraglia Jennifer L ; Baldasseroni Chloe ; Sajjad Basha ; Kang Hu ; Pasquale Frank ; Sakiyama Yukinori ; Sangplung Saangrut ; Swaminathan Shankar ; Augustyniak Edward</creatorcontrib><description>A showerhead in a semiconductor processing apparatus can include faceplate through-holes configured to improve the flow uniformity during atomic layer deposition. The showerhead can include a faceplate having a plurality of through-holes for distributing gas onto a substrate, where the faceplate includes small diameter through-holes. For example, the diameter of each of the through-holes can be less than about 0.04 inches. In addition or in the alternative, the showerhead can include edge through-holes positioned circumferentially along a ring having a diameter greater than a diameter of the substrate being processed. The showerhead can be a low volume showerhead and can include a baffle proximate one or more gas inlets in communication with a plenum volume of the showerhead. The faceplate with small diameter through-holes and/or edge through-holes can improve overall film non-uniformity, improve azimuthal film non-uniformity at the edge of the substrate, and enable operation at higher RF powers.</description><language>eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20161124&DB=EPODOC&CC=US&NR=2016340782A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20161124&DB=EPODOC&CC=US&NR=2016340782A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Chandrasekharan Ramesh</creatorcontrib><creatorcontrib>LaVoie Adrien</creatorcontrib><creatorcontrib>Varadarajan Seshasayee</creatorcontrib><creatorcontrib>Petraglia Jennifer L</creatorcontrib><creatorcontrib>Baldasseroni Chloe</creatorcontrib><creatorcontrib>Sajjad Basha</creatorcontrib><creatorcontrib>Kang Hu</creatorcontrib><creatorcontrib>Pasquale Frank</creatorcontrib><creatorcontrib>Sakiyama Yukinori</creatorcontrib><creatorcontrib>Sangplung Saangrut</creatorcontrib><creatorcontrib>Swaminathan Shankar</creatorcontrib><creatorcontrib>Augustyniak Edward</creatorcontrib><title>LOW VOLUME SHOWERHEAD WITH FACEPLATE HOLES FOR IMPROVED FLOW UNIFORMITY</title><description>A showerhead in a semiconductor processing apparatus can include faceplate through-holes configured to improve the flow uniformity during atomic layer deposition. The showerhead can include a faceplate having a plurality of through-holes for distributing gas onto a substrate, where the faceplate includes small diameter through-holes. For example, the diameter of each of the through-holes can be less than about 0.04 inches. In addition or in the alternative, the showerhead can include edge through-holes positioned circumferentially along a ring having a diameter greater than a diameter of the substrate being processed. The showerhead can be a low volume showerhead and can include a baffle proximate one or more gas inlets in communication with a plenum volume of the showerhead. The faceplate with small diameter through-holes and/or edge through-holes can improve overall film non-uniformity, improve azimuthal film non-uniformity at the edge of the substrate, and enable operation at higher RF powers.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHD38Q9XCPP3CfV1VQj28A93DfJwdXRRCPcM8VBwc3R2DfBxDHFV8PD3cQ1WcPMPUvD0DQjyD3N1UXADaQz18wQK-nqGRPIwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUkvjQYCMDQzNjEwNzCyNHQ2PiVAEArWYtzw</recordid><startdate>20161124</startdate><enddate>20161124</enddate><creator>Chandrasekharan Ramesh</creator><creator>LaVoie Adrien</creator><creator>Varadarajan Seshasayee</creator><creator>Petraglia Jennifer L</creator><creator>Baldasseroni Chloe</creator><creator>Sajjad Basha</creator><creator>Kang Hu</creator><creator>Pasquale Frank</creator><creator>Sakiyama Yukinori</creator><creator>Sangplung Saangrut</creator><creator>Swaminathan Shankar</creator><creator>Augustyniak Edward</creator><scope>EVB</scope></search><sort><creationdate>20161124</creationdate><title>LOW VOLUME SHOWERHEAD WITH FACEPLATE HOLES FOR IMPROVED FLOW UNIFORMITY</title><author>Chandrasekharan Ramesh ; LaVoie Adrien ; Varadarajan Seshasayee ; Petraglia Jennifer L ; Baldasseroni Chloe ; Sajjad Basha ; Kang Hu ; Pasquale Frank ; Sakiyama Yukinori ; Sangplung Saangrut ; Swaminathan Shankar ; Augustyniak Edward</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2016340782A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2016</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>Chandrasekharan Ramesh</creatorcontrib><creatorcontrib>LaVoie Adrien</creatorcontrib><creatorcontrib>Varadarajan Seshasayee</creatorcontrib><creatorcontrib>Petraglia Jennifer L</creatorcontrib><creatorcontrib>Baldasseroni Chloe</creatorcontrib><creatorcontrib>Sajjad Basha</creatorcontrib><creatorcontrib>Kang Hu</creatorcontrib><creatorcontrib>Pasquale Frank</creatorcontrib><creatorcontrib>Sakiyama Yukinori</creatorcontrib><creatorcontrib>Sangplung Saangrut</creatorcontrib><creatorcontrib>Swaminathan Shankar</creatorcontrib><creatorcontrib>Augustyniak Edward</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chandrasekharan Ramesh</au><au>LaVoie Adrien</au><au>Varadarajan Seshasayee</au><au>Petraglia Jennifer L</au><au>Baldasseroni Chloe</au><au>Sajjad Basha</au><au>Kang Hu</au><au>Pasquale Frank</au><au>Sakiyama Yukinori</au><au>Sangplung Saangrut</au><au>Swaminathan Shankar</au><au>Augustyniak Edward</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>LOW VOLUME SHOWERHEAD WITH FACEPLATE HOLES FOR IMPROVED FLOW UNIFORMITY</title><date>2016-11-24</date><risdate>2016</risdate><abstract>A showerhead in a semiconductor processing apparatus can include faceplate through-holes configured to improve the flow uniformity during atomic layer deposition. The showerhead can include a faceplate having a plurality of through-holes for distributing gas onto a substrate, where the faceplate includes small diameter through-holes. For example, the diameter of each of the through-holes can be less than about 0.04 inches. In addition or in the alternative, the showerhead can include edge through-holes positioned circumferentially along a ring having a diameter greater than a diameter of the substrate being processed. The showerhead can be a low volume showerhead and can include a baffle proximate one or more gas inlets in communication with a plenum volume of the showerhead. The faceplate with small diameter through-holes and/or edge through-holes can improve overall film non-uniformity, improve azimuthal film non-uniformity at the edge of the substrate, and enable operation at higher RF powers.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US2016340782A1 |
source | esp@cenet |
subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
title | LOW VOLUME SHOWERHEAD WITH FACEPLATE HOLES FOR IMPROVED FLOW UNIFORMITY |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T10%3A14%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Chandrasekharan%20Ramesh&rft.date=2016-11-24&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2016340782A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |