INVERTED METAMORPHIC MULTIJUNCTION SOLAR CELL WITH TWO METAMORPHIC LAYERS AND HOMOJUNCTION TOP CELL
A multijunction solar cell includes an upper first solar subcell having a first band gap, a second solar subcell having a second band gap smaller than the first band gap, and a first graded interlayer composed of (InxGa1-x)yAl1-yAs adjacent to the second solar subcell. The first graded interlayer ha...
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| creator | Aiken Daniel J Stan Mark A Cho Benjamin Cornfeld Arthur Spann John Sharps Paul R Patel Pravin |
| description | A multijunction solar cell includes an upper first solar subcell having a first band gap, a second solar subcell having a second band gap smaller than the first band gap, and a first graded interlayer composed of (InxGa1-x)yAl1-yAs adjacent to the second solar subcell. The first graded interlayer has a third band gap greater than the second band gap subject to the constraints of having the in-plane lattice parameter greater or equal to that of the second subcell and less than or equal to that of the third subcell, wherein 0 |
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The first graded interlayer has a third band gap greater than the second band gap subject to the constraints of having the in-plane lattice parameter greater or equal to that of the second subcell and less than or equal to that of the third subcell, wherein 0<x<1 and 0<y<1, and x and y are selected such that the band gap of the first graded interlayer remains constant throughout its thickness at 1.5 eV. A third solar subcell is adjacent to the first graded interlayer and has a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell. A second graded interlayer composed of (InxGa1-x)yAl1-yAs is adjacent to the third solar subcell and has a fifth band gap greater than the fourth band gap subject to the constraints of having the in-plane lattice parameter greater or equal to that of the third subcell and less than or equal to that of the bottom fourth subcell, wherein 0<x<1 and 0<y<1, and x and y are selected such that the band gap of the second graded interlayer remains constant throughout its thickness at 1.1 eV. A lower fourth solar subcell is adjacent to the second graded interlayer and has a sixth band gap smaller than the fourth band gap.]]></description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC ; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS ; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION ; SEMICONDUCTOR DEVICES ; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS ; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20161110&DB=EPODOC&CC=US&NR=2016329454A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20161110&DB=EPODOC&CC=US&NR=2016329454A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Aiken Daniel J</creatorcontrib><creatorcontrib>Stan Mark A</creatorcontrib><creatorcontrib>Cho Benjamin</creatorcontrib><creatorcontrib>Cornfeld Arthur</creatorcontrib><creatorcontrib>Spann John</creatorcontrib><creatorcontrib>Sharps Paul R</creatorcontrib><creatorcontrib>Patel Pravin</creatorcontrib><title>INVERTED METAMORPHIC MULTIJUNCTION SOLAR CELL WITH TWO METAMORPHIC LAYERS AND HOMOJUNCTION TOP CELL</title><description><![CDATA[A multijunction solar cell includes an upper first solar subcell having a first band gap, a second solar subcell having a second band gap smaller than the first band gap, and a first graded interlayer composed of (InxGa1-x)yAl1-yAs adjacent to the second solar subcell. The first graded interlayer has a third band gap greater than the second band gap subject to the constraints of having the in-plane lattice parameter greater or equal to that of the second subcell and less than or equal to that of the third subcell, wherein 0<x<1 and 0<y<1, and x and y are selected such that the band gap of the first graded interlayer remains constant throughout its thickness at 1.5 eV. A third solar subcell is adjacent to the first graded interlayer and has a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell. A second graded interlayer composed of (InxGa1-x)yAl1-yAs is adjacent to the third solar subcell and has a fifth band gap greater than the fourth band gap subject to the constraints of having the in-plane lattice parameter greater or equal to that of the third subcell and less than or equal to that of the bottom fourth subcell, wherein 0<x<1 and 0<y<1, and x and y are selected such that the band gap of the second graded interlayer remains constant throughout its thickness at 1.1 eV. A lower fourth solar subcell is adjacent to the second graded interlayer and has a sixth band gap smaller than the fourth band gap.]]></description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</subject><subject>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</subject><subject>REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</subject><subject>TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZEj29AtzDQpxdVHwdQ1x9PUPCvDwdFbwDfUJ8fQK9XMO8fT3Uwj293EMUnB29fFRCPcM8VAICfdHUe3jGOkaFKzg6Oei4OHv6w_XF-IfANbFw8CalphTnMoLpbkZlN1cQ5w9dFML8uNTiwsSk1PzUkviQ4ONDAzNjI0sTUxNHA2NiVMFAECxNbg</recordid><startdate>20161110</startdate><enddate>20161110</enddate><creator>Aiken Daniel J</creator><creator>Stan Mark A</creator><creator>Cho Benjamin</creator><creator>Cornfeld Arthur</creator><creator>Spann John</creator><creator>Sharps Paul R</creator><creator>Patel Pravin</creator><scope>EVB</scope></search><sort><creationdate>20161110</creationdate><title>INVERTED METAMORPHIC MULTIJUNCTION SOLAR CELL WITH TWO METAMORPHIC LAYERS AND HOMOJUNCTION TOP CELL</title><author>Aiken Daniel J ; Stan Mark A ; Cho Benjamin ; Cornfeld Arthur ; Spann John ; Sharps Paul R ; Patel Pravin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2016329454A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2016</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</topic><topic>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</topic><topic>REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</topic><topic>TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE</topic><toplevel>online_resources</toplevel><creatorcontrib>Aiken Daniel J</creatorcontrib><creatorcontrib>Stan Mark A</creatorcontrib><creatorcontrib>Cho Benjamin</creatorcontrib><creatorcontrib>Cornfeld Arthur</creatorcontrib><creatorcontrib>Spann John</creatorcontrib><creatorcontrib>Sharps Paul R</creatorcontrib><creatorcontrib>Patel Pravin</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Aiken Daniel J</au><au>Stan Mark A</au><au>Cho Benjamin</au><au>Cornfeld Arthur</au><au>Spann John</au><au>Sharps Paul R</au><au>Patel Pravin</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>INVERTED METAMORPHIC MULTIJUNCTION SOLAR CELL WITH TWO METAMORPHIC LAYERS AND HOMOJUNCTION TOP CELL</title><date>2016-11-10</date><risdate>2016</risdate><abstract><![CDATA[A multijunction solar cell includes an upper first solar subcell having a first band gap, a second solar subcell having a second band gap smaller than the first band gap, and a first graded interlayer composed of (InxGa1-x)yAl1-yAs adjacent to the second solar subcell. The first graded interlayer has a third band gap greater than the second band gap subject to the constraints of having the in-plane lattice parameter greater or equal to that of the second subcell and less than or equal to that of the third subcell, wherein 0<x<1 and 0<y<1, and x and y are selected such that the band gap of the first graded interlayer remains constant throughout its thickness at 1.5 eV. A third solar subcell is adjacent to the first graded interlayer and has a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell. A second graded interlayer composed of (InxGa1-x)yAl1-yAs is adjacent to the third solar subcell and has a fifth band gap greater than the fourth band gap subject to the constraints of having the in-plane lattice parameter greater or equal to that of the third subcell and less than or equal to that of the bottom fourth subcell, wherein 0<x<1 and 0<y<1, and x and y are selected such that the band gap of the second graded interlayer remains constant throughout its thickness at 1.1 eV. A lower fourth solar subcell is adjacent to the second graded interlayer and has a sixth band gap smaller than the fourth band gap.]]></abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE |
| title | INVERTED METAMORPHIC MULTIJUNCTION SOLAR CELL WITH TWO METAMORPHIC LAYERS AND HOMOJUNCTION TOP CELL |
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