SILVER ALLOYING POST-CHIP JOIN

A method of forming a stacked surface arrangement for semiconductor devices includes joining a first surface to a second surface with a solder bump, the solder bump including a substantially pure first metal; depositing nanoparticles of a second metal onto a surface of the solder bump; performing an...

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Hauptverfasser:	Perfecto Eric D, Brunschwiler Thomas J, Zuercher Jonas
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TRANSPORTING WELDING WORKING BY LASER BEAM
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creator	Perfecto Eric D Brunschwiler Thomas J Zuercher Jonas
description	A method of forming a stacked surface arrangement for semiconductor devices includes joining a first surface to a second surface with a solder bump, the solder bump including a substantially pure first metal; depositing nanoparticles of a second metal onto a surface of the solder bump; performing an annealing operation to form a film of the second metal on the surface of the solder bump; and performing a reflow or a second annealing operation to transform the solder bump from the substantially pure first metal to an alloy of the first metal and the second metal.
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fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2016329289A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2016329289A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2016329289A13</originalsourceid><addsrcrecordid>eNrjZJAL9vQJcw1ScPTx8Y_09HNXCPAPDtF19vAMUPDy9_TjYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBoZmxkaWRhaWjobGxKkCAEElImg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SILVER ALLOYING POST-CHIP JOIN</title><source>esp@cenet</source><creator>Perfecto Eric D ; Brunschwiler Thomas J ; Zuercher Jonas</creator><creatorcontrib>Perfecto Eric D ; Brunschwiler Thomas J ; Zuercher Jonas</creatorcontrib><description>A method of forming a stacked surface arrangement for semiconductor devices includes joining a first surface to a second surface with a solder bump, the solder bump including a substantially pure first metal; depositing nanoparticles of a second metal onto a surface of the solder bump; performing an annealing operation to form a film of the second metal on the surface of the solder bump; and performing a reflow or a second annealing operation to transform the solder bump from the substantially pure first metal to an alloy of the first metal and the second metal.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CLADDING OR PLATING BY SOLDERING OR WELDING ; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MACHINE TOOLS ; METAL-WORKING NOT OTHERWISE PROVIDED FOR ; PERFORMING OPERATIONS ; SEMICONDUCTOR DEVICES ; SOLDERING OR UNSOLDERING ; TRANSPORTING ; WELDING ; WORKING BY LASER BEAM</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20161110&DB=EPODOC&CC=US&NR=2016329289A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20161110&DB=EPODOC&CC=US&NR=2016329289A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Perfecto Eric D</creatorcontrib><creatorcontrib>Brunschwiler Thomas J</creatorcontrib><creatorcontrib>Zuercher Jonas</creatorcontrib><title>SILVER ALLOYING POST-CHIP JOIN</title><description>A method of forming a stacked surface arrangement for semiconductor devices includes joining a first surface to a second surface with a solder bump, the solder bump including a substantially pure first metal; depositing nanoparticles of a second metal onto a surface of the solder bump; performing an annealing operation to form a film of the second metal on the surface of the solder bump; and performing a reflow or a second annealing operation to transform the solder bump from the substantially pure first metal to an alloy of the first metal and the second metal.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CLADDING OR PLATING BY SOLDERING OR WELDING</subject><subject>CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MACHINE TOOLS</subject><subject>METAL-WORKING NOT OTHERWISE PROVIDED FOR</subject><subject>PERFORMING OPERATIONS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SOLDERING OR UNSOLDERING</subject><subject>TRANSPORTING</subject><subject>WELDING</subject><subject>WORKING BY LASER BEAM</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAL9vQJcw1ScPTx8Y_09HNXCPAPDtF19vAMUPDy9_TjYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBoZmxkaWRhaWjobGxKkCAEElImg</recordid><startdate>20161110</startdate><enddate>20161110</enddate><creator>Perfecto Eric D</creator><creator>Brunschwiler Thomas J</creator><creator>Zuercher Jonas</creator><scope>EVB</scope></search><sort><creationdate>20161110</creationdate><title>SILVER ALLOYING POST-CHIP JOIN</title><author>Perfecto Eric D ; Brunschwiler Thomas J ; Zuercher Jonas</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2016329289A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2016</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CLADDING OR PLATING BY SOLDERING OR WELDING</topic><topic>CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MACHINE TOOLS</topic><topic>METAL-WORKING NOT OTHERWISE PROVIDED FOR</topic><topic>PERFORMING OPERATIONS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SOLDERING OR UNSOLDERING</topic><topic>TRANSPORTING</topic><topic>WELDING</topic><topic>WORKING BY LASER BEAM</topic><toplevel>online_resources</toplevel><creatorcontrib>Perfecto Eric D</creatorcontrib><creatorcontrib>Brunschwiler Thomas J</creatorcontrib><creatorcontrib>Zuercher Jonas</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Perfecto Eric D</au><au>Brunschwiler Thomas J</au><au>Zuercher Jonas</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SILVER ALLOYING POST-CHIP JOIN</title><date>2016-11-10</date><risdate>2016</risdate><abstract>A method of forming a stacked surface arrangement for semiconductor devices includes joining a first surface to a second surface with a solder bump, the solder bump including a substantially pure first metal; depositing nanoparticles of a second metal onto a surface of the solder bump; performing an annealing operation to form a film of the second metal on the surface of the solder bump; and performing a reflow or a second annealing operation to transform the solder bump from the substantially pure first metal to an alloy of the first metal and the second metal.</abstract><oa>free_for_read</oa></addata></record>
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language	eng
recordid	cdi_epo_espacenet_US2016329289A1
source	esp@cenet
subjects	BASIC ELECTRIC ELEMENTS CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TRANSPORTING WELDING WORKING BY LASER BEAM
title	SILVER ALLOYING POST-CHIP JOIN
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-03T15%3A57%3A42IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Perfecto%20Eric%20D&rft.date=2016-11-10&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2016329289A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true