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A method of forming a stacked surface arrangement for semiconductor devices includes joining a first surface to a second surface with a solder bump, the solder bump including a substantially pure first metal; depositing nanoparticles of a second metal onto a surface of the solder bump; performing an...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | A method of forming a stacked surface arrangement for semiconductor devices includes joining a first surface to a second surface with a solder bump, the solder bump including a substantially pure first metal; depositing nanoparticles of a second metal onto a surface of the solder bump; performing an annealing operation to form a film of the second metal on the surface of the solder bump; and performing a reflow or a second annealing operation to transform the solder bump from the substantially pure first metal to an alloy of the first metal and the second metal. |
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