CHEMICAL MECHANICAL POLISHING METHOD USING SLURRY COMPOSITION CONTAINING N-OXIDE COMPOUND

The present disclosure relates to a method of performing a chemical mechanical planarization (CMP) process with a high germanium-to-oxide removal selectivity and a low rate of germanium recess formation. The method is performed by providing a semiconductor substrate having a plurality of germanium c...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Chang Song-Yuan, Sun Sey-Ping, Hsu Chia-Jung, Ho Yun-Lung, Chueh Wen-Feng, Chen Neng-Kuo
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES
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