ELECTRODE STRUCTURES FOR ARRAYS OF NANOSTRUCTURES AND METHODS THEREOF
A thermoelectric device and methods thereof. The thermoelectric device includes nanowires, a contact layer, and a shunt. Each of the nanowires includes a first end and a second end. The contact layer electrically couples the nanowires through at least the first end of each of the nanowires. The shun...
Gespeichert in:
Hauptverfasser: | , , , , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | Matus Gabriel A Muckenhirn Sylvain Karri Madhav A Lorimer Adam Scullin Matthew L Wacker Barbara Kardel Justin Tynes |
description | A thermoelectric device and methods thereof. The thermoelectric device includes nanowires, a contact layer, and a shunt. Each of the nanowires includes a first end and a second end. The contact layer electrically couples the nanowires through at least the first end of each of the nanowires. The shunt is electrically coupled to the contact layer. All of the nanowires are substantially parallel to each other. A first contact resistivity between the first end and the contact layer ranges from 10−13 Ω-m2 to 10−7 Ω-m2. A first work function between the first end and the contact layer is less than 0.8 electron volts. The contact layer is associated with a first thermal resistance ranging from 10−2 K/W to 1010 K/W. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2016322554A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2016322554A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2016322554A13</originalsourceid><addsrcrecordid>eNrjZHB19XF1Dgnyd3FVCA4JCnUOCQ1yDVZw8w9ScAwKcowMVvB3U_Bz9PNHknT0c1HwdQ3x8HcJVgjxcA1y9XfjYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBoZmxkZGpqYmjobGxKkCAHCsLWk</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>ELECTRODE STRUCTURES FOR ARRAYS OF NANOSTRUCTURES AND METHODS THEREOF</title><source>esp@cenet</source><creator>Matus Gabriel A ; Muckenhirn Sylvain ; Karri Madhav A ; Lorimer Adam ; Scullin Matthew L ; Wacker Barbara ; Kardel Justin Tynes</creator><creatorcontrib>Matus Gabriel A ; Muckenhirn Sylvain ; Karri Madhav A ; Lorimer Adam ; Scullin Matthew L ; Wacker Barbara ; Kardel Justin Tynes</creatorcontrib><description>A thermoelectric device and methods thereof. The thermoelectric device includes nanowires, a contact layer, and a shunt. Each of the nanowires includes a first end and a second end. The contact layer electrically couples the nanowires through at least the first end of each of the nanowires. The shunt is electrically coupled to the contact layer. All of the nanowires are substantially parallel to each other. A first contact resistivity between the first end and the contact layer ranges from 10−13 Ω-m2 to 10−7 Ω-m2. A first work function between the first end and the contact layer is less than 0.8 electron volts. The contact layer is associated with a first thermal resistance ranging from 10−2 K/W to 1010 K/W.</description><language>eng</language><subject>ELECTRICITY</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20161103&DB=EPODOC&CC=US&NR=2016322554A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20161103&DB=EPODOC&CC=US&NR=2016322554A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Matus Gabriel A</creatorcontrib><creatorcontrib>Muckenhirn Sylvain</creatorcontrib><creatorcontrib>Karri Madhav A</creatorcontrib><creatorcontrib>Lorimer Adam</creatorcontrib><creatorcontrib>Scullin Matthew L</creatorcontrib><creatorcontrib>Wacker Barbara</creatorcontrib><creatorcontrib>Kardel Justin Tynes</creatorcontrib><title>ELECTRODE STRUCTURES FOR ARRAYS OF NANOSTRUCTURES AND METHODS THEREOF</title><description>A thermoelectric device and methods thereof. The thermoelectric device includes nanowires, a contact layer, and a shunt. Each of the nanowires includes a first end and a second end. The contact layer electrically couples the nanowires through at least the first end of each of the nanowires. The shunt is electrically coupled to the contact layer. All of the nanowires are substantially parallel to each other. A first contact resistivity between the first end and the contact layer ranges from 10−13 Ω-m2 to 10−7 Ω-m2. A first work function between the first end and the contact layer is less than 0.8 electron volts. The contact layer is associated with a first thermal resistance ranging from 10−2 K/W to 1010 K/W.</description><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHB19XF1Dgnyd3FVCA4JCnUOCQ1yDVZw8w9ScAwKcowMVvB3U_Bz9PNHknT0c1HwdQ3x8HcJVgjxcA1y9XfjYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBoZmxkZGpqYmjobGxKkCAHCsLWk</recordid><startdate>20161103</startdate><enddate>20161103</enddate><creator>Matus Gabriel A</creator><creator>Muckenhirn Sylvain</creator><creator>Karri Madhav A</creator><creator>Lorimer Adam</creator><creator>Scullin Matthew L</creator><creator>Wacker Barbara</creator><creator>Kardel Justin Tynes</creator><scope>EVB</scope></search><sort><creationdate>20161103</creationdate><title>ELECTRODE STRUCTURES FOR ARRAYS OF NANOSTRUCTURES AND METHODS THEREOF</title><author>Matus Gabriel A ; Muckenhirn Sylvain ; Karri Madhav A ; Lorimer Adam ; Scullin Matthew L ; Wacker Barbara ; Kardel Justin Tynes</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2016322554A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2016</creationdate><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>Matus Gabriel A</creatorcontrib><creatorcontrib>Muckenhirn Sylvain</creatorcontrib><creatorcontrib>Karri Madhav A</creatorcontrib><creatorcontrib>Lorimer Adam</creatorcontrib><creatorcontrib>Scullin Matthew L</creatorcontrib><creatorcontrib>Wacker Barbara</creatorcontrib><creatorcontrib>Kardel Justin Tynes</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Matus Gabriel A</au><au>Muckenhirn Sylvain</au><au>Karri Madhav A</au><au>Lorimer Adam</au><au>Scullin Matthew L</au><au>Wacker Barbara</au><au>Kardel Justin Tynes</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ELECTRODE STRUCTURES FOR ARRAYS OF NANOSTRUCTURES AND METHODS THEREOF</title><date>2016-11-03</date><risdate>2016</risdate><abstract>A thermoelectric device and methods thereof. The thermoelectric device includes nanowires, a contact layer, and a shunt. Each of the nanowires includes a first end and a second end. The contact layer electrically couples the nanowires through at least the first end of each of the nanowires. The shunt is electrically coupled to the contact layer. All of the nanowires are substantially parallel to each other. A first contact resistivity between the first end and the contact layer ranges from 10−13 Ω-m2 to 10−7 Ω-m2. A first work function between the first end and the contact layer is less than 0.8 electron volts. The contact layer is associated with a first thermal resistance ranging from 10−2 K/W to 1010 K/W.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US2016322554A1 |
source | esp@cenet |
subjects | ELECTRICITY |
title | ELECTRODE STRUCTURES FOR ARRAYS OF NANOSTRUCTURES AND METHODS THEREOF |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-21T18%3A30%3A06IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Matus%20Gabriel%20A&rft.date=2016-11-03&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2016322554A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |