MASK ASSEMBLY AND PHOTOLITHOGRAPHY PROCESS USING THE SAME

A mask assembly including a first mask and a second mask is provided. The first mask includes a plurality of first main features parallel to each other, a plurality of first sub-resolution assistant features (SRAFs) and a plurality of second SRAFs. The second SRAFs are separately disposed at one sid...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: Hung Yung-Wen
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!