METHOD AND STRUCTURE TO SUPPRESS FINFET HEATING

Embodiments of the present invention provide structures and methods for heat suppression in finFET devices. Fins are formed in a semiconductor substrate. A graphene layer is formed on a lower portion of the sidewalls of the fins. A shallow trench isolation region is disposed on the structure and cov...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ALPTEKIN Emre, SARDESAI Viraj Yashawant, TRAN Cung Do, VEGA Reinaldo Ariel
Format: Patent
Sprache:eng
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