METHOD FOR THE FORMATION OF A FINFET DEVICE HAVING A PARTIALLY DIELECTRIC ISOLATED FIN STRUCTURE

A semiconductor material is patterned to define elongated fins insulated from an underlying substrate. A polysilicon semiconductor material is deposited over and in between the elongated fins, and is patterned to define elongated gates extending to perpendicularly cross over the elongated fins at a...

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Bibliographische Detailangaben

Hauptverfasser:	LOUBET Nicolas, SAMPSON Ronald K
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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