METHOD OF FORMING SUPRA LOW THRESHOLD DEVICES

A semiconductor device and a method for making the semiconductor device are provided. The semiconductor device includes a non-volatile memory cell having a gate dielectric and formed in a non-volatile memory well region; a first transistor type formed using a first gate oxide and formed in a first t...

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Bibliographische Detailangaben
1. Verfasser: HONG Cheong Min
Format: Patent
Sprache:eng
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