FIN FIELD-EFFECT TRANSISTOR

An etching method adapted to forming grooves in Si-substrate and FinFET transistor manufactured thereof are provided. The etching method includes providing a silicon substrate, at least two gate structures formed on the silicon substrate and at least two gate spacer structures disposed on the silico...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LU SHUI-YEN, LI JHEN-CYUAN, TUNG YUNG, CHANG CHUNG-FU, LU MAN-LING
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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