CHANNEL LAST REPLACEMENT FLOW FOR BULK FINFETS

CHANNEL LAST REPLACEMENT FLOW FOR BULK FINFETS

There is set forth herein a method including patterning a fin on a substrate of a semiconductor structure, forming dielectric material over the substrate, performing a process for removing material from a fin to define a cavity at a channel region of the fin, and forming a replacement semiconductor...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: AKARVARDAR Murat Kerem
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:There is set forth herein a method including patterning a fin on a substrate of a semiconductor structure, forming dielectric material over the substrate, performing a process for removing material from a fin to define a cavity at a channel region of the fin, and forming a replacement semiconductor material formation at the channel region.