SEMICONDUCTOR MEMORY DEVICE
A semiconductor device includes a memory block including memory cells and an operation circuit configured to perform a read operation which reads LSB data or MSB data stored in the memory cells using different levels of read voltages, wherein when the MSB data is stored in the memory cells, the oper...
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | KIM BYOUNG YOUNG |
description | A semiconductor device includes a memory block including memory cells and an operation circuit configured to perform a read operation which reads LSB data or MSB data stored in the memory cells using different levels of read voltages, wherein when the MSB data is stored in the memory cells, the operation circuit is configured to read the MSB data and the LSB data from the memory cells. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2016203872A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2016203872A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2016203872A13</originalsourceid><addsrcrecordid>eNrjZJAOdvX1dPb3cwl1DvEPUvB19fUPilRwcQ3zdHblYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBoZmRgbGFuZGjobGxKkCAOZkIZw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR MEMORY DEVICE</title><source>esp@cenet</source><creator>KIM BYOUNG YOUNG</creator><creatorcontrib>KIM BYOUNG YOUNG</creatorcontrib><description>A semiconductor device includes a memory block including memory cells and an operation circuit configured to perform a read operation which reads LSB data or MSB data stored in the memory cells using different levels of read voltages, wherein when the MSB data is stored in the memory cells, the operation circuit is configured to read the MSB data and the LSB data from the memory cells.</description><language>eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160714&DB=EPODOC&CC=US&NR=2016203872A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160714&DB=EPODOC&CC=US&NR=2016203872A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KIM BYOUNG YOUNG</creatorcontrib><title>SEMICONDUCTOR MEMORY DEVICE</title><description>A semiconductor device includes a memory block including memory cells and an operation circuit configured to perform a read operation which reads LSB data or MSB data stored in the memory cells using different levels of read voltages, wherein when the MSB data is stored in the memory cells, the operation circuit is configured to read the MSB data and the LSB data from the memory cells.</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAOdvX1dPb3cwl1DvEPUvB19fUPilRwcQ3zdHblYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBoZmRgbGFuZGjobGxKkCAOZkIZw</recordid><startdate>20160714</startdate><enddate>20160714</enddate><creator>KIM BYOUNG YOUNG</creator><scope>EVB</scope></search><sort><creationdate>20160714</creationdate><title>SEMICONDUCTOR MEMORY DEVICE</title><author>KIM BYOUNG YOUNG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2016203872A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2016</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>KIM BYOUNG YOUNG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KIM BYOUNG YOUNG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR MEMORY DEVICE</title><date>2016-07-14</date><risdate>2016</risdate><abstract>A semiconductor device includes a memory block including memory cells and an operation circuit configured to perform a read operation which reads LSB data or MSB data stored in the memory cells using different levels of read voltages, wherein when the MSB data is stored in the memory cells, the operation circuit is configured to read the MSB data and the LSB data from the memory cells.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US2016203872A1 |
source | esp@cenet |
subjects | INFORMATION STORAGE PHYSICS STATIC STORES |
title | SEMICONDUCTOR MEMORY DEVICE |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T15%3A59%3A42IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KIM%20BYOUNG%20YOUNG&rft.date=2016-07-14&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2016203872A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |