NON-VOLATILE MEMORY CELL, NAND-TYPE NON-VOLATILE MEMORY, AND METHOD OF MANUFACTURING THE SAME

A non-volatile memory cell, a NAND-type non-volatile memory, and a method of manufacturing the same are provided. The method of manufacturing the non-volatile memory cell includes the following steps. An insulating layer, a first conductive layer, an inter-gate insulating layer, a second conductive...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WANG ZIH-SONG, CHEN CHIH-YUAN, HWANG HANN-PING, YING TZUNG-HUA, FANG YENNG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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