RELIABLE PASSIVATION LAYERS FOR SEMICONDUCTOR DEVICES

Device and method for forming a device are disclosed. A substrate which is prepared with a dielectric layer having a top metal level of the device is provided. The top metal level includes top level conductive lines. A top dielectric layer which includes top via openings in communication with the to...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: CHONG MENG MENG VANESSA, MARIO HENDRO, SEET CHIM SENG, CHENG CHOR SHU, JOHN GEORGE AISON, RAO XUESONG
Format: Patent
Sprache:eng
Schlagworte:
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