FCVD LINE BENDING RESOLUTION BY DEPOSITION MODULATION

FCVD LINE BENDING RESOLUTION BY DEPOSITION MODULATION

A method of reducing line bending and surface roughness of a substrate with pillars includes forming a treated surface by treating a pillar-containing substrate with a radical. The radical may be silicon-based, nitrogen-based or oxygen-based. The method may include forming a dielectric film over the...

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Hauptverfasser: THADANI KIRAN V, RAJAGOPALAN NAGARAJAN, LIANG JINGMEI, KACHIAN JESSICA S
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator THADANI KIRAN V
RAJAGOPALAN NAGARAJAN
LIANG JINGMEI
KACHIAN JESSICA S
description A method of reducing line bending and surface roughness of a substrate with pillars includes forming a treated surface by treating a pillar-containing substrate with a radical. The radical may be silicon-based, nitrogen-based or oxygen-based. The method may include forming a dielectric film over the treated surface by reacting an organosilicon precursor and an oxygen precursor. The method may include curing the dielectric film at a temperature of about 150° C. or less. A method of reducing line bending and surface roughness of a substrate with pillars includes forming a dielectric film over a pillar-containing substrate by reacting an organosilicon precursor, an oxygen precursor, and a radical precursor. The method may include curing the dielectric film at a temperature of about 150° C. or less. The radical precursor may be selected from the group consisting of nitrogen-based radical precursor, oxygen-based radical precursor, and silicon-based radical precursor.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title FCVD LINE BENDING RESOLUTION BY DEPOSITION MODULATION
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