FIN-FET DEVICE AND MANUFACTURING METHOD THEREOF

A fin-like field-effect transistor (Fin-FET) device includes a substrate, a fin structure disposed on the substrate, and an isolation structure disposed adjacent to the fin structure. The fin structure includes a recessed structure, which a bottom of the recessed structure is below a top surface of...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LIN CHIH-HAN, CHANG MINGING, LIN JR-JUNG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!