NONVOLATILE MEMORY DEVICE INCLUDING MULTI-PLANE

NONVOLATILE MEMORY DEVICE INCLUDING MULTI-PLANE

A nonvolatile memory device includes a memory cell array including cell strings stacked in a direction orthogonal to a substrate and including a first substring group and a second substring group dividing the cell strings, and an address decoder connected to memory cells of the cell strings via a pl...

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Hauptverfasser: KWAK PANSUK, HWANG CHUL-JIN, RYU YOUNGHWAN
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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creator KWAK PANSUK
HWANG CHUL-JIN
RYU YOUNGHWAN
description A nonvolatile memory device includes a memory cell array including cell strings stacked in a direction orthogonal to a substrate and including a first substring group and a second substring group dividing the cell strings, and an address decoder connected to memory cells of the cell strings via a plurality of word lines and configured to provide operating voltages to the memory cells, wherein the address decoder is disposed between the first substring group and second substring group.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2016163386A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2016163386A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2016163386A13</originalsourceid><addsrcrecordid>eNrjZND38_cL8_dxDPH0cVXwdfX1D4pUcHEN83R2VfD0c_YJdfH0c1fwDfUJ8dQN8HH0c-VhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGhmaGZsbGFmaOhsbEqQIAuvwnKw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>NONVOLATILE MEMORY DEVICE INCLUDING MULTI-PLANE</title><source>esp@cenet</source><creator>KWAK PANSUK ; HWANG CHUL-JIN ; RYU YOUNGHWAN</creator><creatorcontrib>KWAK PANSUK ; HWANG CHUL-JIN ; RYU YOUNGHWAN</creatorcontrib><description>A nonvolatile memory device includes a memory cell array including cell strings stacked in a direction orthogonal to a substrate and including a first substring group and a second substring group dividing the cell strings, and an address decoder connected to memory cells of the cell strings via a plurality of word lines and configured to provide operating voltages to the memory cells, wherein the address decoder is disposed between the first substring group and second substring group.</description><language>eng</language><subject>ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20160609&amp;DB=EPODOC&amp;CC=US&amp;NR=2016163386A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20160609&amp;DB=EPODOC&amp;CC=US&amp;NR=2016163386A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KWAK PANSUK</creatorcontrib><creatorcontrib>HWANG CHUL-JIN</creatorcontrib><creatorcontrib>RYU YOUNGHWAN</creatorcontrib><title>NONVOLATILE MEMORY DEVICE INCLUDING MULTI-PLANE</title><description>A nonvolatile memory device includes a memory cell array including cell strings stacked in a direction orthogonal to a substrate and including a first substring group and a second substring group dividing the cell strings, and an address decoder connected to memory cells of the cell strings via a plurality of word lines and configured to provide operating voltages to the memory cells, wherein the address decoder is disposed between the first substring group and second substring group.</description><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZND38_cL8_dxDPH0cVXwdfX1D4pUcHEN83R2VfD0c_YJdfH0c1fwDfUJ8dQN8HH0c-VhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGhmaGZsbGFmaOhsbEqQIAuvwnKw</recordid><startdate>20160609</startdate><enddate>20160609</enddate><creator>KWAK PANSUK</creator><creator>HWANG CHUL-JIN</creator><creator>RYU YOUNGHWAN</creator><scope>EVB</scope></search><sort><creationdate>20160609</creationdate><title>NONVOLATILE MEMORY DEVICE INCLUDING MULTI-PLANE</title><author>KWAK PANSUK ; HWANG CHUL-JIN ; RYU YOUNGHWAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2016163386A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2016</creationdate><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>KWAK PANSUK</creatorcontrib><creatorcontrib>HWANG CHUL-JIN</creatorcontrib><creatorcontrib>RYU YOUNGHWAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KWAK PANSUK</au><au>HWANG CHUL-JIN</au><au>RYU YOUNGHWAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>NONVOLATILE MEMORY DEVICE INCLUDING MULTI-PLANE</title><date>2016-06-09</date><risdate>2016</risdate><abstract>A nonvolatile memory device includes a memory cell array including cell strings stacked in a direction orthogonal to a substrate and including a first substring group and a second substring group dividing the cell strings, and an address decoder connected to memory cells of the cell strings via a plurality of word lines and configured to provide operating voltages to the memory cells, wherein the address decoder is disposed between the first substring group and second substring group.</abstract><oa>free_for_read</oa></addata></record>
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INFORMATION STORAGE
PHYSICS
STATIC STORES
title NONVOLATILE MEMORY DEVICE INCLUDING MULTI-PLANE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-09T16%3A18%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KWAK%20PANSUK&rft.date=2016-06-09&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2016163386A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true