THIN FILM III-V OPTOELECTRONIC DEVICE OPTIMIZED FOR NON-SOLAR ILLUMINATION SOURCES
An optoelectronic device with high band-gap absorbers optimized for indoor use and a method of manufacturing are disclosed. The optoelectronic semiconductor device comprises a p-n structure made of one or more compound semiconductors, wherein the p-n structure comprises a base layer and an emitter l...
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creator | ZHANG LING FRANCE CHRISTOPHER HE GANG COWLEY SAM KAYES BRENDAN M HIGASHI GREGG S |
description | An optoelectronic device with high band-gap absorbers optimized for indoor use and a method of manufacturing are disclosed. The optoelectronic semiconductor device comprises a p-n structure made of one or more compound semiconductors, wherein the p-n structure comprises a base layer and an emitter layer, wherein the base and/or emitter layers comprise materials whose quantum efficiency spectrum is well-matched to a spectrum of incident light, wherein the incident light is from a light source other than the sun; and wherein the device is a flexible single-crystal device. The method for forming an optoelectronic device optimized for the conversion of light from non-solar illumination sources into electricity, comprises depositing a buffer layer on a wafer; depositing a release layer above the buffer layer; depositing a p-n structure above the release layer; and lifting off the p-n structure from the wafer. |
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The method for forming an optoelectronic device optimized for the conversion of light from non-solar illumination sources into electricity, comprises depositing a buffer layer on a wafer; depositing a release layer above the buffer layer; depositing a p-n structure above the release layer; and lifting off the p-n structure from the wafer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyr0KwjAUQOEsDqK-wwXngFEqXUN6Qy8kuZKfDi6lSJxEC_X9EcEHcDrwcdYi5p4CWHIeiEgOwJfM6NDkyIEMdDiQwa-Spyt2YDlC4CATOx2BnCuegs7EARKXaDBtxeo-PZa6-3Uj9haz6WWdX2Nd5ulWn_U9lnQ8qLNqmrZVWp3-uz6ppjDY</recordid><startdate>20160602</startdate><enddate>20160602</enddate><creator>ZHANG LING</creator><creator>FRANCE CHRISTOPHER</creator><creator>HE GANG</creator><creator>COWLEY SAM</creator><creator>KAYES BRENDAN M</creator><creator>HIGASHI GREGG S</creator><scope>EVB</scope></search><sort><creationdate>20160602</creationdate><title>THIN FILM III-V OPTOELECTRONIC DEVICE OPTIMIZED FOR NON-SOLAR ILLUMINATION SOURCES</title><author>ZHANG LING ; FRANCE CHRISTOPHER ; HE GANG ; COWLEY SAM ; KAYES BRENDAN M ; HIGASHI GREGG S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2016155881A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2016</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>ZHANG LING</creatorcontrib><creatorcontrib>FRANCE CHRISTOPHER</creatorcontrib><creatorcontrib>HE GANG</creatorcontrib><creatorcontrib>COWLEY SAM</creatorcontrib><creatorcontrib>KAYES BRENDAN M</creatorcontrib><creatorcontrib>HIGASHI GREGG S</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ZHANG LING</au><au>FRANCE CHRISTOPHER</au><au>HE GANG</au><au>COWLEY SAM</au><au>KAYES BRENDAN M</au><au>HIGASHI GREGG S</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>THIN FILM III-V OPTOELECTRONIC DEVICE OPTIMIZED FOR NON-SOLAR ILLUMINATION SOURCES</title><date>2016-06-02</date><risdate>2016</risdate><abstract>An optoelectronic device with high band-gap absorbers optimized for indoor use and a method of manufacturing are disclosed. The optoelectronic semiconductor device comprises a p-n structure made of one or more compound semiconductors, wherein the p-n structure comprises a base layer and an emitter layer, wherein the base and/or emitter layers comprise materials whose quantum efficiency spectrum is well-matched to a spectrum of incident light, wherein the incident light is from a light source other than the sun; and wherein the device is a flexible single-crystal device. The method for forming an optoelectronic device optimized for the conversion of light from non-solar illumination sources into electricity, comprises depositing a buffer layer on a wafer; depositing a release layer above the buffer layer; depositing a p-n structure above the release layer; and lifting off the p-n structure from the wafer.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | THIN FILM III-V OPTOELECTRONIC DEVICE OPTIMIZED FOR NON-SOLAR ILLUMINATION SOURCES |
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