Simultaneous Carbon and Nitrogen Doping of Si in MSM Stack as a Selector Device for Non-Volatile Memory Application

Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KASHEFI KEVIN, PHATAK PRASHANT B, PRAMANIK DIPANKAR, BODKE ASHISH, CLARK MARK
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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