RESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR MANUFACTURING THE SAME

A resistive random access memory including a substrate, a dielectric layer disposed on the substrate and at least one memory cell string is provided. The memory cell string includes memory cells and second vias. The memory cells are vertically and adjacently disposed in the dielectric layer, and eac...

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1. Verfasser:	HSU MAO-TENG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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