NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND REWRITING METHOD THEREOF

A bitwise bidirectionally rewritable nonvolatile semiconductor storage device capable of performing a high-speed data rewrite, while enhancing endurance characteristics and data-retention characteristics of a memory cell. To achieve high-speed generation of rewrite-bit information indicating that a...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ISHITOBI YURIKO, SUWA HITOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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